Results 71 to 80 of about 720 (167)
A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET
We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field ...
Cem Alper +3 more
doaj +1 more source
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief +12 more
wiley +1 more source
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
This work investigates the impact of temperature variation and interface trap charges (ITCs) on the DC, RF/analog, and linearity performance of an L-shaped cladding layer-based dopingless TFET (LCD-TFET) using TCAD simulations.
S. Shabareeshan +3 more
doaj +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV.
Wan Sik Hwang +12 more
doaj +1 more source
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley +1 more source
Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory
This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and aggressive program operation. Strong local electric fields
Seongwoo Kim +3 more
doaj +1 more source
Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang +14 more
wiley +1 more source
Switchable Magnonic Crystals Based on Spin Crossover/CrSBr Heterostructures
Multiscale modeling is employed to investigate the functionality of a light‐controlled, tunable magnonic crystal based on spin‐crossover Fe‐pz molecules integrated with a monolayer of CrSBr. Ab initio simulations confirm that the molecules remain functional on the CrSBr surface, while a semiclassical elastic model demonstrates that light‐induced ...
Andrei Shumilin +4 more
wiley +1 more source

