Results 91 to 100 of about 86,811,437 (336)

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

University Concert Band, February 24, 1998

, 2016
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, February 24, 1998, 8:00 p.m., the 331st concert of the School of Music's 1997-1998 season.Western Michigan University Concert Band, John Lychner ...
Western Michigan University. Concert Band
core  

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Geometric effect in a vertical stack-up metal-insulator-metal tunnel diode

AIP Advances, 2017
The geometric effect was investigated in a vertically designed metal-insulator-metal (MIM) tunnel diode for which a narrow tunneling distance can be controlled easily and reliably, with the goal of enhancing rectifying efficiency, based on the angle of a
Jeong Hee Shin, Jae Hoon Yang, Su Jin Heo, Jae Eun Jang   +3 more
doaj   +1 more source

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

IEEE Journal of the Electron Devices Society, 2018
We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field ...
Cem Alper, Jose Luis Padilla, Pierpaolo Palestri, Adrian M. Ionescu   +3 more
doaj   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Performance Analysis of L-Shaped Cladding Layer-Based Dopingless TFET Including Interface Trap Charges and Temperatures

IEEE Access
This work investigates the impact of temperature variation and interface trap charges (ITCs) on the DC, RF/analog, and linearity performance of an L-shaped cladding layer-based dopingless TFET (LCD-TFET) using TCAD simulations.
S. Shabareeshan, Srinidhi Balakrishnan, Shanidul Hoque, Rajesh Saha   +3 more
doaj   +1 more source

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

AIP Advances, 2019
We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements.
Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe   +5 more
doaj   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source