Results 31 to 40 of about 15,872,973 (276)
Silicon spin diffusion transistor: materials, physics and device characteristics
, 2005 The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C +15 more
core +2 more sources
Guest Editorial: Materials & Devices for Advanced Flexible Sensors
IEEE Open Journal of Nanotechnology, 2023 The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT ...
Yu Xinge
doaj +1 more source
Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
doaj +1 more source
Tunnel field effect transistor (TFET) with lateral oxidation [PDF]
, 2016 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
core +1 more source
Tunnel field-effect transistor with two gated intrinsic regions
AIP Advances, 2014 In this paper, we propose and validate (using simulations) a novel design of silicon tunnel field-effect transistor (TFET), based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of
Y. Zhang, M. Tabib-Azar
doaj +1 more source
Results in Physics, 2022 In this work, we investigate the effects of changing device parameters such as channel length and gate dielectric of n-type double gate (DG) silicon tunneling field effect transistor (TFET).
Kalyan Mondol +3 more
doaj +1 more source
Micromachines, 2023 Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years.
Haiwu Xie, Hongxia Liu
doaj +1 more source
The development of magnetic tunnel junction fabrication techniques [PDF]
, 2005 The discovery of large, room temperature magnetoresistance (MR) in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory (MRAM ...
core +2 more sources
Characterization of silicon tunnel field effect transistor based oncharge plasma
, 2023 The aim of the proposed paper is an analytical model and realization of thecharacteristics for tunnel field-effect transistor (TFET) based on chargeplasma (CP).
Firas Natheer (16958826)
core +1 more source
Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor
IEEE Open Journal of Nanotechnology, 2020 In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj +1 more source