Results 31 to 40 of about 2,904 (271)
Tunnel field effect transistor (TFET) with lateral oxidation [PDF]
, 2016 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
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Characterization of silicon tunnel field effect transistor based oncharge plasma
, 2023 The aim of the proposed paper is an analytical model and realization of thecharacteristics for tunnel field-effect transistor (TFET) based on chargeplasma (CP).
Firas Natheer (16958826)
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Guest Editorial: Materials & Devices for Advanced Flexible Sensors
IEEE Open Journal of Nanotechnology, 2023 The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT ...
Yu Xinge
doaj +1 more source
Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
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Tunnel field-effect transistor with two gated intrinsic regions
AIP Advances, 2014 In this paper, we propose and validate (using simulations) a novel design of silicon tunnel field-effect transistor (TFET), based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of
Y. Zhang, M. Tabib-Azar
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Results in Physics, 2022 In this work, we investigate the effects of changing device parameters such as channel length and gate dielectric of n-type double gate (DG) silicon tunneling field effect transistor (TFET).
Kalyan Mondol +3 more
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Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor
IEEE Open Journal of Nanotechnology, 2020 In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
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Micromachines, 2023 Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years.
Haiwu Xie, Hongxia Liu
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Theoretical study of phosphorene tunneling field effect transistors [PDF]
Applied Physics Letters, 2015 In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications.
Chang, Jiwon, Hobbs, Chris
openaire +3 more sources
Complementary Black Phosphorus Tunneling Field-Effect Transistors [PDF]
ACS Nano, 2018 Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low-power integration circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) and have been demonstrated to overcome the thermionic limit, which results intrinsically in sub-threshold swings of at least 60 mV/dec at room ...
Peng Wu +8 more
openaire +2 more sources