The Tunnel Field-Effect Transistor
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Verreck, Devin +2 more
openaire +2 more sources
Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor. [PDF]
Yu J +7 more
europepmc +2 more sources
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]
In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand +2 more
doaj +1 more source
Graphene antidot nanoribbon tunnel field‐effect transistor
A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj +1 more source
Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
doaj +1 more source
An Extended Gate Field Effect Transistor (EGFET) pH Microsensor [PDF]
Here, an extended – gate field effect transistor (EGFET) pH microsensor was developed for use in fast and sensitive pH measurement applications. The system consisted of two components; a pH sensitive modified gold electrode and a simple and cheap metal ...
İpek , Avcı +2 more
core +1 more source
An Extended Gate Field Effect Transistor-based (EGFET-based) Urea Microbiosensor Based on Polypyrrole [PDF]
Here, an extended – gate field effect transistor (EGFET) urea microsensor based on modified polypyrrole (PPy) is reported for the quantitative detection of urea in aqueous solution.
Mustafa, SEN, İpek, Avci, Merve, Oğuz
core +1 more source
This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
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Tunnel Field-Effect Transistor With Segmented Channel
A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj +1 more source
Chemical and biochemical sensors based on silicon nanowire field-effect transistor arrays [PDF]
Field-effect transistors (FETs) made from semiconducting nanowires have great potential as electronic biochemical sensors if they can be integrated as an array in a CMOS-compatible architecture together with microfluidic channels and interfacing ...
Wipf, Mathias
core +1 more source

