Results 21 to 30 of about 1,639 (228)
Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
Applied Sciences, 2020 Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
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IET Circuits, Devices and Systems, 2021 Investigation and analysis of a ferroelectric material–based dopingless nanotube tunnel field‐effect transistor are conducted using a lead zirconate titanate (PZT) gate stack to induce negative capacitance in the device.
Apoorva +3 more
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IET Circuits, Devices and Systems, 2021 This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
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Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
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Guest Editorial: Materials & Devices for Advanced Flexible Sensors
IEEE Open Journal of Nanotechnology, 2023 The papers in this special section focus on materials and devices for flexible sensors. Presents recent advances in skin electronics, touch sensors for flexible display, near-infrared spectroscopy (NIRS) and organic electrochemical transistors (OECT ...
Yu Xinge
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Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
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A silicon nanocrystal tunnel field effect transistor [PDF]
Applied Physics Letters, 2014 In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxide and the channel in intrinsic polycrystalline silicon.
Harvey-Collard, Patrick +2 more
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Tunnel field-effect transistor with two gated intrinsic regions
AIP Advances, 2014 In this paper, we propose and validate (using simulations) a novel design of silicon tunnel field-effect transistor (TFET), based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of
Y. Zhang, M. Tabib-Azar
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Results in Physics, 2022 In this work, we investigate the effects of changing device parameters such as channel length and gate dielectric of n-type double gate (DG) silicon tunneling field effect transistor (TFET).
Kalyan Mondol +3 more
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