Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor [PDF]
Nanoscale Research Letters, 2018 In this paper, a silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the structure, characteristic, and analog/RF performance of TGTFET, LTFET, and UTFET ...
Shupeng Chen +5 more
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Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET) [PDF]
Micromachines, 2019 Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and ...
Hwa Young Gu, Sangwan Kim
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A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection [PDF]
SensorsIon-Sensitive Field-Effect Transistors (ISFETs) have been extensively used to detect various biomolecules, as the intrinsic charge of these molecules can change the transistor’s current or threshold voltage.
Yourui An +6 more
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Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region
Applied Sciences, 2019 The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET.
Faraz Najam, Yun Seop Yu
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Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor [PDF]
Micromachines, 2019 Junsu Yu, Byung Park, Ryu Donghyun
exaly +2 more sources
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]
Journal of Optoelectronical Nanostructures, 2022 In this paper, we demonstrate an electrostatically dopedjunctionless tunnel field effect transistor which iscomposed of a staggered band alignment at theheterojunction.
Mahdi Mohammadkhani Ghiasvand +2 more
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Graphene antidot nanoribbon tunnel field‐effect transistor
Micro & Nano Letters, 2022 A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
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Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
IEEE Journal of the Electron Devices Society, 2021 In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
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Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [PDF]
Журнал нано- та електронної фізики, 2017 Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor.
Manjula Vijh +2 more
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Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
doaj +1 more source