Results 21 to 30 of about 317,981 (244)
Novel UHF passive rectifier with tunnel FET devices [PDF]
, 2015 The increase of the losses in UHF passive rectifiers with Tunnel FET devices at large RF AC amplitudes are mainly due to the high reverse current inherent of this technology when subjected to high reverse bias conditions.
Nunes Cavalheiro, David Manuel +2 more
core +1 more source
Steep switching in trimmed-gate tunnel FET
AIP Advances, 2018 We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai +5 more
doaj +1 more source
Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices [PDF]
EPJ Web of ConferencesThis article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET.
Datta Emona, Basu Arnab, Paul Sayan
doaj +1 more source
Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj +1 more source
Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2020 Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control.
Shelly Garg, Sneh Saurabh
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2016 This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the Id-Vds-Vgs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum
Jie Min +3 more
doaj +1 more source
Influence of the Tunnel Shape on Shotcrete Lining Stresses [PDF]
, 2011 Tunnel excavation is frequently carried out in rock masses by the drill and blast method and the final shape of the tunnel boundary can be irregular due to overbreaks.
Fabrizio Barpi +3 more
core +1 more source
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
IEEE Journal of the Electron Devices Society, 2016 A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
doaj +1 more source
Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity
Chemosensors, 2023 This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully
Sagarika Choudhury +5 more
doaj +1 more source
A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
npj Quantum Information, 2022 We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
P. L. Bavdaz +8 more
doaj +1 more source