Results 21 to 30 of about 1,083 (193)

Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices [PDF]

open access: yesEPJ Web of Conferences
This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET.
Datta Emona, Basu Arnab, Paul Sayan
doaj   +1 more source

Tunnel Field-Effect Transistor With Segmented Channel

open access: yesIEEE Journal of the Electron Devices Society, 2019
A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj   +1 more source

Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors

open access: yesIEEE Journal of the Electron Devices Society, 2020
Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors

open access: yesIEEE Journal of the Electron Devices Society, 2016
This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the Id-Vds-Vgs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum
Jie Min   +3 more
doaj   +1 more source

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

open access: yesIEEE Journal of the Electron Devices Society, 2016
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen   +4 more
doaj   +1 more source

Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity

open access: yesChemosensors, 2023
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully
Sagarika Choudhury   +5 more
doaj   +1 more source

Silicon Nanotube Tunnel FET as a label free biosensor [PDF]

open access: yes, 2021
Link to publisher's homepage at http://ijneam.unimap.edu.myIn this paper, we propose a Silicon Nanotube Tunnel FET-based biosensor in which ambipolar current is used as the sensitivity parameter.
Avtar, Singh   +4 more
core  

A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

open access: yesnpj Quantum Information, 2022
We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
P. L. Bavdaz   +8 more
doaj   +1 more source

Ultralow-Voltage Bilayer Graphene Tunnel FET [PDF]

open access: yesIEEE Electron Device Letters, 2009
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of ...
FIORI, GIANLUCA, IANNACCONE, GIUSEPPE
openaire   +3 more sources

Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET

open access: yesIEEE Journal of the Electron Devices Society, 2021
In this paper, the influences of channel transport on the output characteristic in sub-100nm heterojunction tunnel FET have been investigated through TCAD simulation.
Yunhe Guan   +3 more
doaj   +1 more source

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