Results 21 to 30 of about 1,137 (197)
Investigation of Linearity Performance and Harmonic distortion between Different Advanced CMOS Devices [PDF]
This article introduces a relative study of linearity performance and harmonic distortion among Si junctionless (JL) FinFET, conventional inversion-mode (IM) FinFET, Tunnel FET, and InGaAs MOSFET.
Datta Emona, Basu Arnab, Paul Sayan
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Tunnel Field-Effect Transistor With Segmented Channel
A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors
Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control.
Shelly Garg, Sneh Saurabh
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This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the Id-Vds-Vgs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum
Jie Min +3 more
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Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
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Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully
Sagarika Choudhury +5 more
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A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
We demonstrate a 36 × 36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.
P. L. Bavdaz +8 more
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In this paper, the influences of channel transport on the output characteristic in sub-100nm heterojunction tunnel FET have been investigated through TCAD simulation.
Yunhe Guan +3 more
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Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified.
Qing-Tai Zhao +11 more
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Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi +4 more
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