Results 31 to 40 of about 1,137 (197)
Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet
Advanced Materials, EarlyView.Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens +8 more
wiley +1 more source
Advanced Materials, EarlyView.Magnetic doping of the topological insulator Bi2Te3 with erbium adatoms induces out‐of‐plane magnetism and breaks time‐reversal symmetry, opening a Dirac gap and driving a Fermi surface transition from hexagonal to star‐of‐David geometry. Microscopy, spectroscopy, and magnetic dichroism reveal atomically controlled magnetic interactions that tailor the
Beatriz Muñiz Cano +18 more
wiley +1 more source
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations
IEEE Journal of the Electron Devices Society, 2018 A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs. Outward-faced n-TFETs are used as access-transistors.
G. V. Luong +7 more
doaj +1 more source
A lateral resonant tunneling FET
Superlattices and Microstructures, 1988 Abstract A lateral resonant tunneling FET (RTFET) is proposed. The RTFET has three closely spaced gates. The outer gates control the barrier heights, and the inner gate controls the potential of the quantum well. These gates are capacitively coupled to the barriers and the well, therefore, the gate currents are very small.
S.Y. Chou +3 more
openaire +1 more source
Study of a Fringing Field Biosensor Tunnel-FET
ECS Journal of Solid State Science and Technology, 2021 In this paper, we present a comprehensive study of the Fringing Field Biosensor Tunnel-FET (Bio-TFET) device based on 2D-device simulation. The presence of a biomaterial with a distinct dielectric constant (k, where ε = k*ε 0) on the underlap region (LUD) between gate and drain affects the ambipolar drain current (ID).
Christian Nemeth Macambira +2 more
openaire +3 more sources
A Functional 2D Carbon Allotrope Combining Nanoporous Graphene and Biphenylene Segments
Advanced Materials, EarlyView.The synthesis of a novel nanoporous graphene (NPG) is reported with biphenylene segments via thermal fusion of 12‐armchair porous graphene nanoribbons grown on gold surfaces. Characterization using STM, AFM, and DFT reveals low‐defect semiconducting behaviour and tunable band gaps.
Paula Angulo‐Portugal +14 more
wiley +1 more source
Ultralow-Voltage Bilayer Graphene Tunnel FET [PDF]
IEEE Electron Device Letters, 2009 In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of ...
FIORI, GIANLUCA, IANNACCONE, GIUSEPPE
openaire +3 more sources
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018 Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin-orbit coupling (SOC).
Peter A. Dowben +9 more
doaj +1 more source