Results 31 to 40 of about 1,083 (193)

Compact modeling of DG-Tunnel FET for Verilog-A implementation

, 2015
In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band ...
Antonios Bazigos, Bazigos, Antonios, Adrian Mihai Ionescu, Arnab Biswas, Ionescu, Adrian Mihai, Biswas, Arnab, De Michielis, Luca, Luca De Michielis   +7 more
core   +1 more source

A lateral resonant tunneling FET

Superlattices and Microstructures, 1988
Abstract A lateral resonant tunneling FET (RTFET) is proposed. The RTFET has three closely spaced gates. The outer gates control the barrier heights, and the inner gate controls the potential of the quantum well. These gates are capacitively coupled to the barriers and the well, therefore, the gate currents are very small.
S.Y. Chou, E. Wolak, J.S. Harris, R.F.W. Pease   +3 more
openaire   +1 more source

Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET

Micromachines, 2019
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation.
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang   +7 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET

IEEE Transactions on Electron Devices, 2020
To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in ...
Bizindavyi, Jasper, Verhulst, Anne S., Soree, Bart, Groeseneken, Guido   +3 more
openaire   +2 more sources

Tunnel-FET Evolution and Applications for Analog Circuits

Journal of Integrated Circuits and Systems, 2022
In this work different generations of field effect tunneling transistor (TFET) are evaluated through DC digital and analog figures of merits. For TFET devices the main digital figure of merit is the subthreshold slope (SS), while for analog application the intrinsic voltage gain (AV) is the most important one.
Agopian, Paula Ghedini Der, Martino, Joao A., Simoen, Eddy, Rooyackers, Rita, Claeys, Cor   +4 more
openaire   +2 more sources

Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

Advanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi, Mario Palacios‐Corella, Arjan Mol, Salvador Pané, Josep Puigmartí‐Luis   +4 more
wiley   +1 more source

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

IEEE Journal of the Electron Devices Society, 2015
Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified.
Qing-Tai Zhao, Simon Richter, Christian Schulte-Braucks, Lars Knoll, Sebastian Blaeser, Gia Vinh Luong, Stefan Trellenkamp, Anna Schafer, Andreas Tiedemann, Jean-Michel Hartmann, Konstantin Bourdelle, Siegfried Mantl   +11 more
doaj   +1 more source

Study of the utbbbe soi tunnel-fet working as a dual-technology transistor

, 2021
— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the struc-ture, but also as an nMOS ...
Martino, João A., Agopian, Paula G. D. [UNESP], Mori, Carlos A. B.   +2 more
core   +1 more source

Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet

Advanced Materials, EarlyView.
Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens, Francisco Romero‐Lara, Trisha Sai, Kalyan Biswas, Manuel Vilas‐Varela, Thomas Frederiksen, Diego Peña, Fabian Schulz, Jose Ignacio Pascual   +8 more
wiley   +1 more source