Results 51 to 60 of about 1,083 (193)
Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor
Nanoscale Research Letters, 2021 In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules.
Chen Chong +3 more
doaj +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Tunnel FET device characteristics for RF energy harvesting passive rectifiers
, 2015 The lack of high power conversion efficiency in RF passive rectifier circuits at sub-µW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage ...
Nunes Cavalheiro, David Manuel +1 more
core +1 more source
Discover Nano, 2023 In this paper, we propose an inductive line tunneling FET using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation (CEI ETL GS-iTFET).
Jyi-Tsong Lin, Yen-Chen Chang
doaj +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Analog and RF performance optimization for gate all around tunnel FET using broken-gap material
Scientific Reports, 2022 Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device.
Pankaj Kumar +4 more
doaj +1 more source
Atlas simulation based study of SOI tunnel fet [PDF]
, 2014 It is observed that there are basically two limitations with the conventional mosfet, especially sub-threshold swing swings. Its minimum value being 60 mv/decade. But we cannot decrease it lesser. In order to decrease sub-threshold further, we use tunnel
Kumar, S, Majhi, K K
core
A novel normally-off GaN power tunnel junction FET
, 2011 We demonstrate AlGaN/GaN tunnel junction FETs (TJ-FET) featuring a metal-2DEG Schottky junction at the source. The TJ-FETs exhibit normally-off operation in an otherwise normally-on as-grown sample owing to a current controlling scheme different from the
Yuan, Li +9 more
core +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Steep Slope Field Effect Transistors Based on 2D Materials
Advanced Electronic MaterialsWith field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down ...
Laixiang Qin +8 more
doaj +1 more source