Results 61 to 70 of about 1,137 (197)

Thermionic emission-dominated sub-60 mV dec−1 operation in BSb/CNT van der Waals heterostructure transistors

New Journal of Physics
The continuous scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) is fundamentally limited by short-channel effects and the Boltzmann tyranny, which imposes a minimum subthreshold swing (SS) of 60 mV dec ^−1 at room temperature.
Kai Shi, Shuai Lang, Shun Song, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +6 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

From Flexible to Conformable Pressure Sensors: Mechanisms, Materials, and Biomedical Applications

Advanced Electronic Materials, EarlyView.
This review highlights recent progress, challenges and future opportunities in pressure sensing for advanced biomedical applications. We summarize key transduction mechanisms and emerging material strategies, discuss representative wearable and implantable applications for continuous physiological monitoring and provide a focused perspective on barrier
Rishabh B. Mishra, Andrea Ottomaniello, Virgilio Mattoli   +2 more
wiley   +1 more source

Comparative Study of Steep Switching Devices for 1T Dynamic Memory

Tecnología en Marcha
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha, Hasan Raza Ansari, Leonard Register, Sanjay Banerjee   +3 more
doaj   +1 more source

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

IEEE Access, 2019
Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation.
Xiangzhan Wang, Zhouquan Tang, Lei Cao, Jingchun Li, Yang Liu   +4 more
doaj   +1 more source

Orientation‐Engineered PtTe2 Schottky FETs: Quantum Transport Insights for Dopant‐Free Advanced Technology Nodes

Advanced Electronic Materials, EarlyView.
Monolayer PtTe2 enables dopant‐free Schottky FETs through its thickness‐dependent electronic transition. Quantum transport simulations show that crystallographic orientation strongly influences device performance, with Γ–M transport delivering higher drive current, lower leakage, and improved switching behavior.
Lida Ansari, Paul K. Hurley, Farzan Gity
wiley   +1 more source

Performance Projections for a Reconfigurable Tunnel NanoFET

IEEE Journal of the Electron Devices Society, 2017
Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance
Stefan Blawid, Denise L. M. de Andrade, Sven Mothes, Martin Claus   +3 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

IEEE Journal of the Electron Devices Society, 2015
This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed ...
Dan Li, Baili Zhang, Haijun Lou, Lining Zhang, Xinnan Lin, Mansun Chan   +5 more
doaj   +1 more source