Results 61 to 70 of about 317,981 (244)

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Design and performance of an open jet wind tunnel for aero-acoustic measurement [PDF]

, 2009
This paper presents the design and performance of an open jet, blow down wind tunnel that was newly commissioned in the anechoic chamber at the ISVR, University of Southampton, UK. This wind tunnel is intended for the measurement of airfoil trailing edge
Chong, T.P., Joseph, P.F., Davies, P.O.A.L., Davies, POAL, Joseph, PF, Chong, TP   +5 more
core   +1 more source

Steep Slope Field Effect Transistors Based on 2D Materials

Advanced Electronic Materials
With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down ...
Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren   +8 more
doaj   +1 more source

Investigation and Simulation of Work-Function Variation for III–V Broken-Gap Heterojunction Tunnel FET

IEEE Journal of the Electron Devices Society, 2015
This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns
Chih-Wei Hsu, Ming-Long Fan, Vita Pi-Ho Hu, Pin Su   +3 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor

Micro and Nano Engineering
Hybrid room-temperature (RT) silicon single-electron – field effect transistors (SET-FETs) provide a means to switch between ‘classical’, high current FET, and low-power SET operation, using a gate voltage.
Kai-Lin Chu, Wenkun He, Faris Abualnaja, Mervyn Jones, Zahid Durrani   +4 more
doaj   +1 more source

MXenes Contacts for p‐type 2D Electronics

Advanced Science, EarlyView.
Solution‐processed MXene contacts are engineered for p‐type 2H‐MoTe2 transistors. By comparing Ti3C2Tx, Nb2CTx, and Mo2CTx, Nb2CTx is identified as the best‐performing contact among the MXenes examined in this work, offering favorable work‐function alignment, low contact resistance, and near‐ohmic hole injection for scalable 2D electronics.
Tianchao Guo, Maolin Chen, Yizhou Wang, Chen Liu, Xiangming Xu, Linqu Luo, Dekang Zhu, Ning Chu, Xiaowen Zhang, Alfonso Caraveo, Thomas D. Anthopoulos, Xixiang Zhang, Husam N. Alshareef   +12 more
wiley   +1 more source

Modelling tunnel thrusters for autonomous underwater vehicles [PDF]

, 2008
With 900 Autonomous Underwater Vehicles (AUVs) required over the next decade (Newman et al., 2007) existing survey-style AUVs need improved utilization factors.
Stevenson, P., Hearn, G.E., Palmer, A.
core   +3 more sources

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

Advanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

McVey tunnel

, 2022
Scale approximately 1:12,000. 1000 feet to one inch. Vertical scale approximately 1:4,800. 400 feet to 1 inch.Color."Cross section of mountain 'A' to 'B' on line of McVey Tunnel.

core