Results 81 to 90 of about 1,137 (197)

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications

IEEE Journal of the Electron Devices Society, 2017
RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, EarlyView.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017
In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conduction ...
Jie Min, Peter M. Asbeck
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance

IEEE Access
This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies ...
Dipshika Das, Rudra Sankar Dhar, Pradip Kumar Ghosh, Yash Sharma, Amit Banerjee   +4 more
doaj   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Gate Dielectric Engineering Using Stacked Gate Dielectric in U-Shaped Gate Tunnel FET

IET Circuits, Devices and Systems
In this paper, an innovative approach for the performance enhancement of tunnel field-effect transistors (TFETs) is presented with the introduction of the stacked gate oxide U-shaped tunnel FET (SUTFET).
Sina Mehrad, Hamid Reza Yaghobi, Kaveh Eyvazi, Mohammad Azim Karami   +3 more
doaj   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source