Results 71 to 80 of about 1,083 (193)

Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles

Nature Communications
Highly sensitive, low-power, and chip-scale H2 gas sensors are of great interest to both academia and industry. Field-effect transistors (FETs) functionalized with Pd nanoparticles (PdNPs) have recently emerged as promising candidates for such H2 sensors.
Qitao Hu, Paul Solomon, Lars Österlund, Zhen Zhang   +3 more
doaj   +1 more source

Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio

, 2012
In this paper, we have experimentally demonstrated an all-Si Pocket-Tunnel FET (Pocket-TFET) with steep subthreshold slope (SS) of 52mV/dec and high I ON/IOFF ratio of 3.9??106 based on the bulk silicon substrate by CMOS compatible process.
Wu, Chunlei, Qiu, Yingxin, Ru Huang, Qianqian Huang, Yangyuan Wang, Wang, Yangyuan, Zhan Zhan, Ru, Huang, Yingxin Qiu, Zhan, Zhan, Chunlei Wu, Huang, Qianqian   +11 more
core   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Thermionic emission-dominated sub-60 mV dec−1 operation in BSb/CNT van der Waals heterostructure transistors

New Journal of Physics
The continuous scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) is fundamentally limited by short-channel effects and the Boltzmann tyranny, which imposes a minimum subthreshold swing (SS) of 60 mV dec ^−1 at room temperature.
Kai Shi, Shuai Lang, Shun Song, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +6 more
doaj   +1 more source

Sub 0.5 V Operation of Performance Driven Mobile Systems Based on Area Scaled Tunnel FET Devices

, 2013
Advanced mobile applications demand low power and high performance systems. In this paper, a technology computer aided design (TCAD)-based feasibility investigation of a recently proposed area tunneling field effect transistor (FET) structure is carried ...
SCHULZ, T, RAO, VR, RAJORIYA, A, SHRIVASTAVA, M, GOSSNER, H   +4 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I $_{\text {ON}}=\text {433}\,\,\mu$ A. $\mu$ m $^{-\text {1}}$ at V $_{\text {DS}}= \text {0.5}$ V

IEEE Journal of the Electron Devices Society, 2017
We report on the fabrication of a near broken InAs/Al0.5Ga0.5Sb vertical TUNNEL field effect transistor (TFET). The epitaxial structure is grown on a GaAs (001) substrate thanks to large mismatch accommodation at the GaSb/GaAs interface.
Vinay Kumar Chinni, Mohammed Zaknoune, Christophe Coinon, Laurence Morgenroth, David Troadec, Xavier Wallart, Ludovic Desplanque   +6 more
doaj   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Comparative Study of Steep Switching Devices for 1T Dynamic Memory

Tecnología en Marcha
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha, Hasan Raza Ansari, Leonard Register, Sanjay Banerjee   +3 more
doaj   +1 more source