Results 71 to 80 of about 1,137 (197)
Advanced Intelligent Discovery, EarlyView.This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath +4 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2015 A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj +1 more source
AIP Advances, 2020 In this work, a single layer n-doped MoS2 and p-doped WTe2 based vertical heterojunction tunnel FET has been investigated through a well-organized quantum mechanical approach.
Tanmoy Kumar Paul +1 more
doaj +1 more source
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Advanced Intelligent Discovery, EarlyView.Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Performance Investigation of Source Extension Approach on III–V Vertical Tunnel FET
IEEE AccessA triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach ...
M. Saravanan, Eswaran Parthasarathy
doaj +1 more source
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
IEEE Journal of the Electron Devices Society, 2019 A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge ...
Jheng-Sin Liu +2 more
doaj +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
Electron, EarlyView.This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
FlexMat, EarlyView.Abstract Soft robots, engineered from highly compliant materials, offer superior adaptability and safety in unstructured environments compared to their rigid counterparts. Recent advancements, fueled by bio‐inspiration and material programmability, have led to the rapid co‐evolution of their core modules: actuation, sensing, protection, energy, and ...
Qiulei Liu +3 more
wiley +1 more source