Results 101 to 110 of about 1,083 (193)
Novel charge pump converter with Tunnel FET devices for ultra-low power energy harvesting sources [PDF]
, 2015 Compared to conventional technologies, the superior electrical characteristics of III-V Tunnel FET (TFET) devices can highly improve the process of energy harvesting conversion at ultra-low input voltage operation (sub-0.25V).
Nunes Cavalheiro, David Manuel +2 more
core +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
Electron, EarlyView.This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design
Discover NanoIn this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj +1 more source
Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications
IEEE Journal of the Electron Devices Society, 2017 RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj +1 more source
, 2015 Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradation of
Trellenkamp, S. +6 more
core +1 more source
FlexMat, EarlyView.Abstract Soft robots, engineered from highly compliant materials, offer superior adaptability and safety in unstructured environments compared to their rigid counterparts. Recent advancements, fueled by bio‐inspiration and material programmability, have led to the rapid co‐evolution of their core modules: actuation, sensing, protection, energy, and ...
Qiulei Liu +3 more
wiley +1 more source
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conduction ...
Jie Min, Peter M. Asbeck
doaj +1 more source
Observation of Tunneling FET Operation in MOSFET with NiSi/Si Schottky Source/Channel Interface
, 2011 Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P+ layer was formed for the drain electrode. On-and
Yan Wu +10 more
core +1 more source
Borophene‐based sensing platforms: Pioneering ultrasensitive detection
FlexMat, EarlyView.Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley +1 more source
Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance
IEEE AccessThis work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies ...
Dipshika Das +4 more
doaj +1 more source