Results 101 to 110 of about 317,981 (244)

Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications

IEEE Journal of the Electron Devices Society, 2017
RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj   +1 more source

Challenges and strategies toward next‐generation high‐performance flexible and printable thin‐film transistors

FlexMat, EarlyView.
This review explores recent progress in printing strategies such as inkjet, screen, liquid metal, and roll to roll (R2R) methods and their roles in fabricating flexible TFTs. Device architectures are examined with emphasis on printed components and their influence on performance and stability.
Xia Zhao, Zhongqing Zeng, Zeyu Hu, Jaekyun Kim, Jidong Jin, Wensi Cai, Zhigang Zang   +6 more
wiley   +1 more source

Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017
In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conduction ...
Jie Min, Peter M. Asbeck
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Multi-homing tunnel broker [PDF]

, 2004
A proper support for communications has to provide fault tolerance capabilities such as the preservation of established connections in case of failures.
Bagnulo Braun, Marcelo Gabriel, A. Garcia-Martinez, García-Martínez, Alberto, Bagnulo, Marcelo, Rodríguez-Hervella, Juan Francisco, Azcorra Saloña, Arturo, Azcorra, Arturo, M. Bagnulo, J.F. Rodriguez-Hervella, A. Azcorra   +9 more
core   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Sensitivity Analysis of Biosensor-Based SiGe Source Dual Gate Tunnel FET Having Negative Capacitance

IEEE Access
This work proposes a unique design of charge plasma based junctionless SiGe source TFET with dual cavity and ferroelectric gate dielectric. The biosensor works on the principle of dielectric modulation for label-free detection, where the cavity lies ...
Dipshika Das, Rudra Sankar Dhar, Pradip Kumar Ghosh, Yash Sharma, Amit Banerjee   +4 more
doaj   +1 more source

High‐Pressure Chemical Vapor Deposition Growth of Transition Metal Dichalcogenides With Minimized Sulfur Vacancies

National Materials, EarlyView.
High‐pressure chemical vapor deposition at 3800 torr elevates the sulfur chemical potential during MoS2 growth, suppressing sulfur‐vacancy formation. This thermodynamic control yields MoS2 with defect densities comparable to those of exfoliated crystals, enhanced crystallinity, uniform defect distribution, and improved electronic transport properties ...
Takmo Jeong, Bumsub Song, Bong Gyu Shin, Jae Woo Kim, Sang‐Hyeok Yang, Young‐Min Kim, Ki Kang Kim, Young Hee Lee, Seok Joon Yun   +8 more
wiley   +1 more source

Ferroelectric tunnel fet switch and memory

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n ...
Ionescu, Mihai Adrian
core  

Metal-CH3NH3PbI3-Metal Tunnel FET

, 2018
A novel-gated structure of aluminum (Al)-perovskite (CH3NH3PbI3)-indium tin oxide (ITO), with Al as source and ITO as drain terminals, has been reported. Ambipolar nature of CH3NH3PbI3 has been explored for the device channel.
Agrawal, Kalpana, Srivastava, Ritu, Rajput, S. S., Gupta, Vinay   +3 more
core   +1 more source