Results 111 to 120 of about 1,083 (193)

Impact of Device Geometry of the Fin Electron-Hole Bilayer Tunnel FET

, 2016
We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is
Pierpaolo Palestri, Adrian M. Ionescu, Cem Alper, Padilla, J. L., PALESTRI, Pierpaolo, Ionescu, A. M., Alper, C., Jose L. Padilla   +7 more
core   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

Ferroelectric tunnel fet switch and memory

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n ...
Ionescu, Mihai Adrian
core  

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Gate Dielectric Engineering Using Stacked Gate Dielectric in U-Shaped Gate Tunnel FET

IET Circuits, Devices and Systems
In this paper, an innovative approach for the performance enhancement of tunnel field-effect transistors (TFETs) is presented with the introduction of the stacked gate oxide U-shaped tunnel FET (SUTFET).
Sina Mehrad, Hamid Reza Yaghobi, Kaveh Eyvazi, Mohammad Azim Karami   +3 more
doaj   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution.
Moselund, Kirsten E., Ionescu, Adrian M., Riel, Heike, Lattanzio, Livio, De Michielis, Luca   +4 more
core   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Loss‐of‐Function Variants in CCDC189 Cause Human Oligoasthenoteratozoospermia by Disrupting Sperm Flagellar and Acrosomal Architecture

Andrology, EarlyView.
ABSTRACT Background Oligoasthenoteratozoospermia (OAT), characterized by reduced sperm count, impaired motility, and abnormal morphology, is a major cause of male infertility with substantial genetic heterogeneity. However, the underlying genetic etiology remains unresolved in a large proportion of affected individuals.
Jianteng Zhou, Ghulam Mustafa, Tingting Lin, Jingwei Ye, Huan Zhang, Hanwei Jiang, Kexin Yang, Guoning Huang, Qinghua Shi   +8 more
wiley   +1 more source