Results 121 to 130 of about 1,083 (193)
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 4, July 2026.The structure, properties, preparation methods, and characterization techniques of BP. As a typical 2D layered material, black phosphorus (BP) demonstrates exceptional promise in various fields, particularly in energy storage for alkali metal‐ion batteries. However, its distinctive structure and properties, together with the compositional complexity of
Yunqing Wang +7 more
wiley +1 more source
Novel UHF passive rectifier with tunnel FET devices
The increase of the losses in UHF passive rectifiers with Tunnel FET devices at large RF AC amplitudes are mainly due to the high reverse current inherent of this technology when subjected to high reverse bias conditions.
Nunes Cavalheiro, David Manuel +2 more
core
Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors
Advanced Science, Volume 13, Issue 33, 15 June 2026.. ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton +4 more
wiley +1 more source
Tunnel FET device characteristics for RF energy harvesting passive rectifiers
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-µW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage ...
Nunes Cavalheiro, David Manuel +1 more
core
, 2012 this paper, a novel junction depleted-modulation design to achieve equivalently abrupt tunnel junction of Si Tunnel FET (TFET) is proposed. By changing the gate layout configuration, the new Junction-modulated TFET can reliably and effectively achieve ...
Wenzhe Jiang +13 more
core +1 more source
Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher ...
Ionescu, Adrian M. +2 more
core +1 more source
Impacts of Ammonia Plasma Treatment on Tunnel-FET With Poly-Si Channel Film
, 2016 To obtain the faster operation speed and lower cost in fabrication\uef\ubcChannel length is continuously scaling down. However, negligible short channel effect(SCE) are observed and lead to increased of leakage current and reduce gate control ability ...
Chang, Kang
core
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1].
Palestri, P. +4 more
core +1 more source
Design of RF to DC Rectifier using Steep Slope Tunnel FET Device for RF Powered Systems
, 2018 Radio Frequency (RF) harvesting is a process of converting the available ambient RF sources in to Dc electricity which can able to power up the ultra low power wireless sensor networks, charging systems, RFID applications and bio-implantable devices ...
Selvan, Saravana +5 more
core
Realisation of III-V Tunnel-FET with in-situ ultimate scaled gate stack for high performance power efficient CMOS [PDF]
, 2018 The main objective of this thesis is realising a non-planar III-V Tunnel-FET for low power device applications. The differentiating aspect of this work is based around clustered inductively coupled plasma (ICP) etch and atomic layer deposition (ALD ...
Fu, Yen-Chun
core