Results 131 to 140 of about 1,083 (193)

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/I off characteristics.
Boucart, K., Ionescu, A. M., Riess, W.
core   +1 more source

Silicon tunnel FETs for digital and analogue applications

, 2018
As number of transistors per unit area in integrated circuits increases, power dissipation of the chips becomes progressively important. Scaling of supply voltage VDD is an important measure to decrease dynamic Pdynamic and static Pstatic power consumption of integrated circuits. However, considering inherent limitation of MOSFETs, this either leads to
openaire   +3 more sources

Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: one in terms of gate ...
Boucart, Kathy, Ionescu, Adrian M.
core   +1 more source

Modeling and Simulation of CNT based tunnel FET

, 2017
This thesis is submitted to the Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology in partial fulfillment of the requirements for the degree of Master of Science in Electrical and Electronic Engineering ...
Sarker, Md. Shamim
core  

A new definition of threshold voltage in Tunnel FETs

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data.
Boucart, Kathy, Ionescu, Adrian Mihai
core   +1 more source

(Innovative sharp switching devices : from TFET to Z2-FET

, 2012
Tunnel à effet de champ (TFET) et un nouveau composant MOS à rétroaction que nous avons nommé le Z2-FET.Le Z2-FET est envisagé pour la logique faible consommation et pour les applications mémoire compatibles avecles technologies CMOS avancées. Nous avons
Wan, Jing
core  

Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor

, 2019
In this work we propose for the first time the use of the recently introduced UTBB (SOI)-S-BE TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition.
Agopian, Paula G. D. [UNESP], Martino, Joao A., IEEE, Mori, Carlos A. B.   +3 more
core  

Ge Pocket-Based Dual Gate Tunnel FET: A Label-Free Biosensor

ACS Omega
M. Salim Wani, Anam Khan, Abdullah G. Alharbi, Sultan S. Aldkeelalah, Sajad A. Loan   +4 more
doaj   +1 more source

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Tunnel FETs with tunneling normal to the gate

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 2013
Summary form only given. In this talk, I will review some of the recent development of tunnel field effect transistors (TFETs) at Notre Dame [1-8]. Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve Ion/Ioff > 103 with Ion > 100 uA/um at low supply voltages (up to 0.5 V).
Huili Grace Xing, Guangle Zhou, Mingda Li, Yiqing Lu, Rui Li, Mark Wistey, Patrick Fay, Debdeep Jena, Alan Seabaugh   +8 more
openaire   +1 more source

A Tunnel Dielectric-Based Tunnel FET

IEEE Electron Device Letters, 2015
In this letter, for the first time, we proposed and demonstrated a novel tunnel dielectric-based tunnel FET (TD-TFET). Instead of using semiconductor band-to-band tunneling currents to form drive currents as in normal TFET, tunneling currents through ultrathin dielectric form the drive currents in the TD-TFET. The fabricated devices have achieved 55-mV/
Zhijiong Luo, Hefei Wang, Ning An, Zhengyong Zhu   +3 more
openaire   +1 more source