Results 41 to 50 of about 1,137 (197)

MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Advanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li, Juiteng Chang, Keisuke Atsumi, Kosei Matsumoto, Itsuki Tanaka, Tomonori Nishimura, Kaito Kanahashi, Takahiro Nagata, Jun Nara, Yoshiki Sakuma, Emi Kano, Nobuyuki Ikarashi, Kosuke Nagashio   +12 more
wiley   +1 more source

High-Performance Dielectric Modulated Epitaxial Tunnel Layer Tunnel FET for Label-Free Detection of Biomolecules

IEEE Open Journal of Nanotechnology
In this paper, using calibrated simulation we have reported a dielectric modulated epitaxial tunnel layer TFET (DM ETL-TFET) for the label-free detection of biomolecules. We have shown that due to vertical tunneling direction, the ETL-TFET exhibits $\sim$
Kunal Aggarwal, Avinash Lahgere
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor

Nanoscale Research Letters, 2021
In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules.
Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen   +3 more
doaj   +1 more source

Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET

IEEE Transactions on Electron Devices, 2020
To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in ...
Bizindavyi, Jasper, Verhulst, Anne S., Soree, Bart, Groeseneken, Guido   +3 more
openaire   +2 more sources

Tunnel-FET Evolution and Applications for Analog Circuits

Journal of Integrated Circuits and Systems, 2022
In this work different generations of field effect tunneling transistor (TFET) are evaluated through DC digital and analog figures of merits. For TFET devices the main digital figure of merit is the subthreshold slope (SS), while for analog application the intrinsic voltage gain (AV) is the most important one.
Agopian, Paula Ghedini Der, Martino, Joao A., Simoen, Eddy, Rooyackers, Rita, Claeys, Cor   +4 more
openaire   +2 more sources

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation

Discover Nano, 2023
In this paper, we propose an inductive line tunneling FET using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation (CEI ETL GS-iTFET).
Jyi-Tsong Lin, Yen-Chen Chang
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source