Results 41 to 50 of about 317,981 (244)

Study of a Fringing Field Biosensor Tunnel-FET

ECS Journal of Solid State Science and Technology, 2021
In this paper, we present a comprehensive study of the Fringing Field Biosensor Tunnel-FET (Bio-TFET) device based on 2D-device simulation. The presence of a biomaterial with a distinct dielectric constant (k, where ε = k*ε 0) on the underlap region (LUD) between gate and drain affects the ambipolar drain current (ID).
Christian Nemeth Macambira, Paula Ghedini Der Agopian, João Antônio Martino   +2 more
openaire   +3 more sources

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Tunneling spectroscopy of magnetic tunnel junctions [PDF]

, 2010
Drewello V. Tunneling spectroscopy of magnetic tunnel junctions. Bielefeld (Germany): Bielefeld University; 2010.In this thesis, magnetic tunnel junctions based on MgO barriers have been prepared and investigated.
Drewello, Volker
core  

Ultralow-Voltage Bilayer Graphene Tunnel FET [PDF]

IEEE Electron Device Letters, 2009
In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of ...
FIORI, GIANLUCA, IANNACCONE, GIUSEPPE
openaire   +3 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

“Smelltronics”—From Gas to Smell Sensing

Advanced Materials, EarlyView.
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono, Tsunaki Takahashi, Jiangyang Liu, Haruka Honda, Zeng Jing, Wataru Tanaka, Takuro Hosomi, Takeshi Yanagida   +7 more
wiley   +1 more source

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2018
Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin-orbit coupling (SOC).
Peter A. Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov   +9 more
doaj   +1 more source

Tunnel-FET Evolution and Applications for Analog Circuits

Journal of Integrated Circuits and Systems, 2022
In this work different generations of field effect tunneling transistor (TFET) are evaluated through DC digital and analog figures of merits. For TFET devices the main digital figure of merit is the subthreshold slope (SS), while for analog application the intrinsic voltage gain (AV) is the most important one.
Agopian, Paula Ghedini Der, Martino, Joao A., Simoen, Eddy, Rooyackers, Rita, Claeys, Cor   +4 more
openaire   +2 more sources

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Perpendicular anisotropy in magnetic tunnel junctions [PDF]

, 2012
Kugler Z. Perpendicular anisotropy in magnetic tunnel junctions.
Kugler, Zoe
core