Results 21 to 30 of about 2,142 (219)

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Nanoscale Research Letters, 2020
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong   +5 more
doaj   +1 more source

Modelling and simulation of Heteromaterial Dual-Gate Dopingless TFET (HTDGDL-TFET) and its application as digital inverter [PDF]

, 2022
Tunnel Field -Effect Transistor (TFET) has been known as one of the promising devices which will be replacing Conventional Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) as a future low-power and high-speed logic application.
Teoh, Wei Ting
core  

In-Line Tunnel Field Effect Transistor: Drive Current Improvement

IEEE Journal of the Electron Devices Society, 2018
A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park, Amir N. Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain   +3 more
doaj   +1 more source

Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure

Applied Sciences, 2020
Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in work ...
Garam Kim, Jang Hyun Kim, Jaemin Kim, Sangwan Kim   +3 more
doaj   +1 more source

Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

Micromachines, 2018
Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang, Yuan Yang, Ningmei Yu, Juin J. Liou   +3 more
doaj   +1 more source

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

npj 2D Materials and Applications, 2022
The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design.
Sayan Kanungo, Gufran Ahmad, Parikshit Sahatiya, Arnab Mukhopadhyay, Sanatan Chattopadhyay   +4 more
doaj   +1 more source

Investigation on Ambipolar Current Suppression Using a Stacked Gate in an L-shaped Tunnel Field-Effect Transistor

Micromachines, 2019
L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu, Sihyun Kim, Donghyun Ryu, Kitae Lee, Changha Kim, Jong-Ho Lee, Sangwan Kim, Byung-Gook Park   +7 more
doaj   +1 more source

Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET [PDF]

, 2020
This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor.
Hashim, Yasir, Shakib, Mohammed Nazmus, Agha, Firas Natheer Abdul-kadir, Firas Natheer Abdul-kadir Agha, Mohammed Nazmus Shakib, Yasir Hashim   +5 more
core   +3 more sources

Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)

IEEE Access, 2020
A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS ...
Jang Woo Lee, Woo Young Choi
doaj   +1 more source

High-Performance Dielectric Modulated Epitaxial Tunnel Layer Tunnel FET for Label-Free Detection of Biomolecules

IEEE Open Journal of Nanotechnology
In this paper, using calibrated simulation we have reported a dielectric modulated epitaxial tunnel layer TFET (DM ETL-TFET) for the label-free detection of biomolecules. We have shown that due to vertical tunneling direction, the ETL-TFET exhibits $\sim$
Kunal Aggarwal, Avinash Lahgere
doaj   +1 more source