Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
IEEE Journal of the Electron Devices Society, 2020 This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
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TFET-Based Op-amp Design for Computational Circuits [PDF]
, 2021 Tunnel field effect transistor (TFET) is rapidly replacing MOSFETs in low power designs and applications. This is due to high leakage power that engendered from scaling down CMOS transistors.
Naheem Olakunle Adesina +5 more
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Drain current model for a hetero‐dielectric single gate tunnel field effect transistor ( HDSG TFET ) [PDF]
, 2022 Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing,
Singh, Ajay Kumar +2 more
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Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 We demonstrate improvement of electrical characteristics of a bilayer tunneling field effect transistor (TFET) composed of an n-type zinc-tin-oxide (ZnSnO) channel with superior thickness uniformity and a p-type Si source.
Kimihiko Kato +4 more
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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Nanoscale Research Letters, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang +4 more
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IET Circuits, Devices and Systems, 2021 In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
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Performance Analysis of Double Material Gate (DG) -TFET with Channel Doping [PDF]
, 2022 Double Material Gate (DG) Tunnel Field Effect Transistor (TFET) is proposed in this paper with current semiconductor materials analogous to Silicon dioxide (Sio2) and Hafnium Oxide (Hfo2) in 5 nm regime with symmetrical Gate to resolve the challenges ...
V, Raju +6 more
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In-Line Tunnel Field Effect Transistor: Drive Current Improvement
IEEE Journal of the Electron Devices Society, 2018 A new architecture of tunnel field effect transistor (TFET) with in-line (vertical) tunneling area is introduced. By adding the vertical tunneling area, the in-line TFET architecture outperformed the normal TFET in terms of the drive current, the ...
Woojin Park +3 more
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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Nanoscale Research Letters, 2020 In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen +5 more
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Modelling and simulation of Heteromaterial Dual-Gate Dopingless TFET (HTDGDL-TFET) and its application as digital inverter [PDF]
, 2022 Tunnel Field -Effect Transistor (TFET) has been known as one of the promising devices which will be replacing Conventional Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) as a future low-power and high-speed logic application.
Teoh, Wei Ting
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