Results 31 to 40 of about 2,142 (219)
Electrical characterization of si nanowire GAA-TFET based ondimensions downscaling
, 2023 This research paper explains the effect of the dimensions of Gate-all-aroundSi nanowire tunneling field effect transistor (GAA Si-NW TFET) onON/OFF current ratio, drain induces barrier lowering (DIBL), sub-thresholdswing (SS), and threshold voltage (VT).
Firas Natheer (16958826)
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Tunnel field effect transistor (TFET) with lateral oxidation [PDF]
, 2016 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
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TFET-Based Op-amp Design for Computational Circuits
, 2021 Tunnel field effect transistor (TFET) is rapidly replacing MOSFETs in low power designs and applications. This is due to high leakage power that engendered from scaling down CMOS transistors.
Naheem Olakunle Adesina +5 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ...
Jo-Han Hung +5 more
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Drain current model for a hetero‐dielectric single gate tunnel field effect transistor ( HDSG TFET )
, 2022 Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing,
Singh, Ajay Kumar +2 more
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Gate Centric Extended Source SOI TFET [PDF]
, 2023 An alternative SOI TFET structure precisely GCES SOI TFET has been proposed and studied in this paper by modifying its gate length for three different values.
Kalita, Riju +2 more
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Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs
Advances in Condensed Matter Physics, 2015 A novel nanoscale fully depleted strained-SOI TFET (FD-SSOI TFET) is proposed and exhaustively simulated through Atlas Device Simulator. It is found that FD-SSOI TFET has the potential of improved on-current and steep subthreshold swing. Furthermore, the
Yu-Chen Li +3 more
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Switching Mechanism and the Scalability of Vertical-TFETs [PDF]
IEEE Transactions on Electron Devices, 2018 In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions.
Fan Chen +4 more
openaire +2 more sources
Ultralow Voltage FinFET- Versus TFET-Based STT-MRAM Cells for IoT Applications [PDF]
, 2021 Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile memories.
Marco Lanuzza +3 more
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Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
IEEE Access, 2018 In this paper, an electrostatically-doped hetero-barrier tunnel-field-effect-transistor (EDHet-TFET) based on stepped broken-gap (type-III) is simulated, investigated, and compared with the conventionally-doped stepped broken-gap hetero-barrier TFET (Het-
M. Ehteshamuddin +2 more
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