Results 31 to 40 of about 1,965 (222)
Applied Sciences, 2020 Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in work ...
Garam Kim +3 more
doaj +1 more source
RF energy harvesting using emerging TFET technology [PDF]
, 2016 Radio frequency (RF) energy harvesting circuit using a 20 nm InAs double-gate n-channel TFET has been studied. RF-DC converter using a two-stage cross-coupled rectifier is evaluated.
null Jiann-Shiun Yuan +3 more
core +1 more source
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Micromachines, 2018 Currently, a tunnel field-effect transistor (TFET) is being considered as a suitable electrostatic discharge (ESD) protection device in advanced technology.
Zhaonian Yang +3 more
doaj +1 more source
npj 2D Materials and Applications, 2022 The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design.
Sayan Kanungo +4 more
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Micromachines, 2019 L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
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Switching Mechanism and the Scalability of Vertical-TFETs [PDF]
IEEE Transactions on Electron Devices, 2018 In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-TFET is found to be different from previous predictions.
Fan Chen +4 more
openaire +2 more sources
Tunnel field effect transistor (TFET) with lateral oxidation [PDF]
, 2016 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
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Low-Dropout Voltage Regulator Designed with Nanowire TFET with Different Source Composition Experimental Data [PDF]
, 2023 This paper presents the design of low-dropout volt-age regulators (LDO) using nanowire tunnel field-effect tran-sistors (TFETs) and nanowire MOSFET.
Nascimento Tolêdo, Rodrigo Do +5 more
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Ultralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications [PDF]
, 2021 Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile memories.
Taco R. +3 more
core +3 more sources
IEEE Access, 2020 A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS ...
Jang Woo Lee, Woo Young Choi
doaj +1 more source