Results 51 to 60 of about 1,665 (175)

19F NMR as a Molecular Reporter: Labelling Strategies and Methods for Probing Biomolecular Motion and Exchange

Chemistry–Methods, Volume 6, Issue 2, February 2026.
This review summarizes the unique benefits 19F NMR spectroscopy has to offer for the study of biological systems. Particular focus is laid on the available strategies for incorporation of fluorinated probes into proteins and the latest applications of the ever‐expanding toolbox of fluorine NMR methodology to study structure and dynamics.
Charles Burridge, Björn M. Burmann
wiley   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

IEEE Access, 2022
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya, Kalyan Koley, Jitendra Kumar, Pankaj Kumar   +3 more
doaj   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, Volume 8, Issue 2, February 2026.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

Gate Centric Extended Source SOI TFET [PDF]

, 2023
An alternative SOI TFET structure precisely GCES SOI TFET has been proposed and studied in this paper by modifying its gate length for three different values.
Kalita, Riju, Goswami, Bijoy, Sarkar, Subir Kumar   +2 more
core  

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source

Low-Dropout Voltage Regulator Designed with Nanowire TFET with Different Source Composition Experimental Data

, 2023
This paper presents the design of low-dropout volt-age regulators (LDO) using nanowire tunnel field-effect tran-sistors (TFETs) and nanowire MOSFET.
Nascimento Tolêdo, Rodrigo Do, Joao Antonio Martino, Martino, Joao Antonio, Der Agopian, Paula Ghedini [UNESP], Paula Ghedini Der Agopian, Rodrigo Tolêdo   +5 more
core   +1 more source

Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits

Journal of Low Power Electronics and Applications, 2015
In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region.
Yin-Nien Chen, Chien-Ju Chen, Ming-Long Fan, Vita Pi-Ho Hu, Pin Su, Ching-Te Chuang   +5 more
doaj   +1 more source

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

IEEE Access, 2020
A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to
Shizheng Yang, Hongliang Lv, Bin Lu, Silu Yan, Yuming Zhang   +4 more
doaj   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo, Hongda Ren, Yang Zhang, Jianhua Hao   +3 more
wiley   +1 more source