Results 61 to 70 of about 1,665 (175)

Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis [PDF]

, 2023
In this paper, the undoped vertical dual-bilayer tunnel field effect transistor (UV-DBL-TFET) at a low operating voltage (0.5 V) is introduced, and its DC and RF performance parameters are compared with those of the conventional charge plasma-based ...
Sunny Anand, Dinesh Prasad, Naveen Kumar, Anam, Aadil, Aadil Anam, S Intekhab Amin, Kumar, Naveen, Amin, S. Intekhab, Prasad, Dinesh, Anand, Sunny   +9 more
core   +1 more source

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

IEEE Access, 2022
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation.
Abdullah Al Mamun Mazumder, Kamal Hosen, Md. Sherajul Islam, Jeongwon Park   +3 more
doaj   +1 more source

A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.
This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley   +1 more source

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Micromachines, 2019
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin, Yue Hao   +6 more
doaj   +1 more source

Advancing the Frontiers of HfO2‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications

Advanced Materials, Volume 37, Issue 50, December 17, 2025.
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou, Lingqi Li, Yang Feng, Xiaolin Wang, Zijie Zheng, Leming Jiao, Haofei Zheng, Yufei Shi, Kah‐Wee Ang, Xiao Gong   +9 more
wiley   +1 more source

CMOS Sensor Nodes with Sub-PicoWatt TFET Memory

, 2016
International audienceThis paper describes the applicability of Tunnel FETs (TFET) to ultra-low-power sensor-node embedded Static Random-Access Memories (SRAM).
Makosiej, Adam, Anghel, Costin, Amara, Amara, Vladimirescu, Andrei, Gupta, Navneet   +4 more
core   +1 more source

Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET [PDF]

, 2020
This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor.
Hashim, Yasir, Shakib, Mohammed Nazmus, Agha, Firas Natheer Abdul-kadir, Firas Natheer Abdul-kadir Agha, Mohammed Nazmus Shakib, Yasir Hashim   +5 more
core   +1 more source

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

IEEE Journal of the Electron Devices Society, 2016
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Zhihong Chen, Rajib Rahman   +4 more
doaj   +1 more source

Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation

Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.
A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, Woo Young Choi   +5 more
wiley   +1 more source

Analytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET

ECTI Transactions on Electrical Engineering, Electronics, and Communications, 2014
In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Approximation Technique.
T.S.Arun Samuel, N. Arumugam, S.Theodore Chandra   +2 more
openaire   +2 more sources