Results 61 to 70 of about 2,142 (219)

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

IEEE Access, 2020
A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to
Shizheng Yang, Hongliang Lv, Bin Lu, Silu Yan, Yuming Zhang   +4 more
doaj   +1 more source

19F NMR as a Molecular Reporter: Labelling Strategies and Methods for Probing Biomolecular Motion and Exchange

Chemistry–Methods, Volume 6, Issue 2, February 2026.
This review summarizes the unique benefits 19F NMR spectroscopy has to offer for the study of biological systems. Particular focus is laid on the available strategies for incorporation of fluorinated probes into proteins and the latest applications of the ever‐expanding toolbox of fluorine NMR methodology to study structure and dynamics.
Charles Burridge, Björn M. Burmann
wiley   +1 more source

Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET

IEEE Access, 2022
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation.
Abdullah Al Mamun Mazumder, Kamal Hosen, Md. Sherajul Islam, Jeongwon Park   +3 more
doaj   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

InfoMat, Volume 8, Issue 2, February 2026.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li, Yee Sin Ang   +11 more
wiley   +1 more source

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Micromachines, 2019
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin, Yue Hao   +6 more
doaj   +1 more source

Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect

Small, Volume 22, Issue 9, 12 February 2026.
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi, Umer Ahsan, Muhammad Farooq Khan, Jamal Aziz, Payal Chauhan, Paweł Piotr Michałowski, Yuan Chen, Goki Eda, Martin Loula, Kalyan Jyoti Sarkar, Zdenek Sofer   +10 more
wiley   +1 more source

CMOS Sensor Nodes with Sub-PicoWatt TFET Memory

, 2016
International audienceThis paper describes the applicability of Tunnel FETs (TFET) to ultra-low-power sensor-node embedded Static Random-Access Memories (SRAM).
Makosiej, Adam, Anghel, Costin, Amara, Amara, Vladimirescu, Andrei, Gupta, Navneet   +4 more
core   +1 more source

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

IEEE Journal of the Electron Devices Society, 2016
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Zhihong Chen, Rajib Rahman   +4 more
doaj   +1 more source

Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction

Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.
In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo, Hongda Ren, Yang Zhang, Jianhua Hao   +3 more
wiley   +1 more source

Design and Performance Analysis of Dielectrically Modulated Diagonal Tunneling TFET for Label Free Sensing

IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao, Srinivasa Rao Karumuri, Paolo Marconcini   +2 more
wiley   +1 more source