Results 61 to 70 of about 1,965 (222)
Low Power and Energy‐Efficient Design of MTJ/FinFET Circuits
Engineering Reports, Volume 8, Issue 3, March 2026.This work begins by outlining the fundamental concepts of MTJs, FinFETs, and the conventional hybrid CMOS/MTJ framework. It then explains the operating mechanism and configuration of the proposed STT‐MTJ/FinFET‐based OR logic gate. The final sections present the simulation outcomes and analyze the influence of FinFET fin variation.
Pillem Ramesh, Atul S. M. Tripathi
wiley +1 more source
Performance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective [PDF]
, 2022 Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing the importance of high performance while maintaining energy efficiency to ensure long battery life.
Luis Miguel Prócel +5 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient energy harvesting circuits by ...
David Nunes Cavalheiro +2 more
doaj +1 more source
Graphene antidot nanoribbon tunnel field‐effect transistor
Micro & Nano Letters, 2022 A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure.
Zhixing Xiao
doaj +1 more source
Design and TCAD Simulation of p+–n+ InAs‐Based TFET
Nano Select, Volume 7, Issue 3, March 2026.A physics‐based design and optimization of a p+−n+${{p}^ + } - {{n}^ + }$ InAs tunnel field‐effect transistor is presented using calibrated quantum‐corrected TCAD simulations. By employing a composite figure of merit that unifies digital and RF metrics, the proposed homojunction architecture achieves steep subthreshold swing, enhanced cutoff frequency,
Muhammad Elgamal +5 more
wiley +1 more source
TFET NDR skewed inverter based sensing method [PDF]
, 2016 International audienceMany of CMOS SRAMs (like 8T-SRAMs), DRAMs, non-volatile memories and TFET SRAMs use single ended read. Optimization of such sensing schemes is critical. Conventional single ended sensing requires either full discharge of bitline (BL)
Makosiej, Adam +5 more
core +1 more source
Comparative performance analysis of different gate structure engineering on double gate tunnel FET
Next MaterialsThrough band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli +3 more
doaj +1 more source
Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET
IEEE Access, 2022 The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect ...
Ashish Maurya +3 more
doaj +1 more source
Chemistry–Methods, Volume 6, Issue 2, February 2026.This review summarizes the unique benefits 19F NMR spectroscopy has to offer for the study of biological systems. Particular focus is laid on the available strategies for incorporation of fluorinated probes into proteins and the latest applications of the ever‐expanding toolbox of fluorine NMR methodology to study structure and dynamics.
Charles Burridge, Björn M. Burmann
wiley +1 more source
Gate Centric Extended Source SOI TFET [PDF]
, 2023 An alternative SOI TFET structure precisely GCES SOI TFET has been proposed and studied in this paper by modifying its gate length for three different values.
Kalita, Riju +2 more
core