Results 71 to 80 of about 1,665 (175)
Low-power Hybrid TFET-CMOS Memory
, 2018 The power consumption and the switching speed of the current CMOS technology have reached their limits. In contrast, architecture design within computer systems are continuously seeking more performance and efficiency. Advanced technologies that optimize
Gopinath, Anoop
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Design of a Hybrid SET-TFET Nanoscale IC for RF and Microwave Frequencies
, 2022 Device size has now reached the nanoscale range due to advancements in technology and scaling in the fields of very large-scale integration. The single-electron transistor (SET) is a promising solid-state device that can provide an extension for Moore ...
Hazzazi, Fawwaz +5 more
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Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo +2 more
wiley +1 more source
Tunnel Field-Effect Transistors: Prospects and Challenges
IEEE Journal of the Electron Devices Society, 2015 The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement
Uygar E. Avci +2 more
doaj +1 more source
Engineering SnSe Isolated State Steep‐Slope MOSFETs for High‐Performance Applications
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.Steep‐slope MOSFETs for high‐performance and low‐power applications are achieved by applying asymmetric underlap, strain, and a gate‐all‐around design. Abstract To overcome Boltzmann thermal limitation, the study investigates isolated‐state field‐effect transistors based on armchair SnSe nanoribbons using first‐principles calculations and quantum ...
Lu Qin +4 more
wiley +1 more source
Studies of Vertical Two\ue2Gate PN type TFET and Schottky Barrier BJT type TFET
, 2020 In this thesis, we proposes a vertical Two-Gate PN type Tunneling Field-Effect Transistor (VTG PN-TFET) architecture and the novel Schottky Barrier BJT type Tunneling Field-Effect Transistor. (SB BJT-TFET).
Chen, Yu-Jen
core
Tunnel field effect transistor (TFET) with lateral oxidation
, 2011 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
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Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
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Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends
ChemistryEurope, Volume 3, Issue 6, November 11, 2025.Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
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Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study
Results in Physics, 2016 This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials.
Md. Shamim Sarker +3 more
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