Results 71 to 80 of about 1,965 (222)
Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling [PDF]
, 2020 This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage ...
Abdul-Kadir, Firas Natheer +8 more
core +2 more sources
InfoMat, Volume 8, Issue 2, February 2026.Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho +11 more
wiley +1 more source
Journal of Low Power Electronics and Applications, 2015 In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region.
Yin-Nien Chen +5 more
doaj +1 more source
IEEE Access, 2020 A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to
Shizheng Yang +4 more
doaj +1 more source
Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET
IEEE Access, 2022 We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation.
Abdullah Al Mamun Mazumder +3 more
doaj +1 more source
Electrical Transport of Nb‐Doped MoS2 Homojunction P–N Diode: Investigating NDR and Avalanche Effect
Small, Volume 22, Issue 9, 12 February 2026.Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Ehsan Elahi +10 more
wiley +1 more source
A Systematic Investigation of Dual Material Gate TFET for Improved Performance [PDF]
229-237This study explores the influence of different metal gate combinations on the performance of dual-metal gate TFETs (DMG-TFET). The ON-state current in a TFET depends on band-to-band tunneling (BTBT) across the junction between the source and ...
Prasad, Miriyala Durga, Saini, Gaurav
core +1 more source
Robust Hybrid TFET-MOSFET Circuits in Presence of Process Variations and Soft Errors [PDF]
, 2016 International audienceIn this work, to improve the timing yield of Tunnel Field Effect Transistor (TFET) circuits in the presence of process variations as well as their soft-error resiliency, we propose replacing some of TFET-based gates by MOSFET-based ...
Kamal, Mehdi +7 more
core +1 more source
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis [PDF]
, 2023 In this paper, the undoped vertical dual-bilayer tunnel field effect transistor (UV-DBL-TFET) at a low operating voltage (0.5 V) is introduced, and its DC and RF performance parameters are compared with those of the conventional charge plasma-based ...
Sunny Anand +9 more
core +1 more source
Neuromorphic Device Based on Material and Device Innovation toward Multimode and Multifunction
Advanced Intelligent Systems, Volume 8, Issue 1, January 2026.In the era of big data, multimodal and multifunctional neuromorphic devices offer significant opportunities in designing AI hardware. In this work, recent advances about emerging material systems and novel device structures in this field are summarized in detail. Potential applications are reviewed.
Feng Guo +3 more
wiley +1 more source