Results 71 to 80 of about 2,142 (219)
Studies of Vertical Two\ue2Gate PN type TFET and Schottky Barrier BJT type TFET
, 2020 In this thesis, we proposes a vertical Two-Gate PN type Tunneling Field-Effect Transistor (VTG PN-TFET) architecture and the novel Schottky Barrier BJT type Tunneling Field-Effect Transistor. (SB BJT-TFET).
Chen, Yu-Jen
core
Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling [PDF]
, 2020 This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage ...
Abdul-Kadir, Firas Natheer +8 more
core +1 more source
Tunnel Field-Effect Transistors: Prospects and Challenges
IEEE Journal of the Electron Devices Society, 2015 The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement
Uygar E. Avci +2 more
doaj +1 more source
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley +1 more source
Tunnel Field-Effect Transistor With Segmented Channel
IEEE Journal of the Electron Devices Society, 2019 A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its ...
Jaesoo Park, Changhwan Shin
doaj +1 more source
Advanced Materials, Volume 37, Issue 50, December 17, 2025.HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou +9 more
wiley +1 more source
Tunnel field effect transistor (TFET) with lateral oxidation
, 2011 A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
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Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study
Results in Physics, 2016 This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials.
Md. Shamim Sarker +3 more
doaj +1 more source
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.A high‐density and highly‐reliable capacitive time‐domain (TD) content‐addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor with band‐reject‐filter‐shaped capacitance‐voltage characteristics is proposed. The proposed TD CAM performs linear Hamming distance computation via propagation delay modulation, achieving improved ...
Minjeong Ryu +5 more
wiley +1 more source
From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
, 2021 International audienceIn this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are designed using either 32 nm or Tunnel-FET (TFET) technology.
Taco, Ramiro +4 more
core +1 more source