Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs
IEEE Access, 2019 Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation.
Xiangzhan Wang +4 more
doaj +1 more source
TFET NDR skewed inverter based sensing method
, 2016 International audienceMany of CMOS SRAMs (like 8T-SRAMs), DRAMs, non-volatile memories and TFET SRAMs use single ended read. Optimization of such sensing schemes is critical. Conventional single ended sensing requires either full discharge of bitline (BL)
Makosiej, Adam +5 more
core +1 more source
Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions [PDF]
, 2020 In this work, the impact of the nanowire TFET diameter on analog parameters in "weak" and "strong inversion" conditions is analyzed. Its relation with the current conduction mechanism is also studied.
C C M Bordallo +8 more
core
Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling
, 2020 This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage ...
Abdul-Kadir, Firas Natheer +8 more
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A Systematic Investigation of Dual Material Gate TFET for Improved Performance
229-237This study explores the influence of different metal gate combinations on the performance of dual-metal gate TFETs (DMG-TFET). The ON-state current in a TFET depends on band-to-band tunneling (BTBT) across the junction between the source and ...
Prasad, Miriyala Durga, Saini, Gaurav
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Robust Hybrid TFET-MOSFET Circuits in Presence of Process Variations and Soft Errors
, 2016 International audienceIn this work, to improve the timing yield of Tunnel Field Effect Transistor (TFET) circuits in the presence of process variations as well as their soft-error resiliency, we propose replacing some of TFET-based gates by MOSFET-based ...
Kamal, Mehdi +7 more
core +1 more source
Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering
607-613This article presents the Gate Overlap on Drain with Hetero Gate Dielectric TFET (GDHD-TFET), a novel tunnel FET structure aimed at addressing the low ON current and ambipolar leakage observed in traditional TFETs.
Avinash, Ganta, Saini, Gaurav
core +1 more source
Bandgap modulated phosphorene based gate drain underlap double-gate TFET
, 2018 In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Dip Joti Paul +2 more
core +1 more source
P-Type Tunnel FETs With Triple Heterojunctions
IEEE Journal of the Electron Devices Society, 2016 A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly ...
Jun Z. Huang +4 more
doaj +1 more source
A source drain symmetric and interchangeable bidirectional tunneling field effect transistor
AIP Advances, 2018 A novel bidirectional tunneling field effect transistor with source drain symmetric and interchangeable functions (SDSI BT FET) is proposed in this work.
Xiaoshi Jin +3 more
doaj +1 more source