Results 91 to 100 of about 2,142 (219)
A Systematic Investigation of Dual Material Gate TFET for Improved Performance
229-237This study explores the influence of different metal gate combinations on the performance of dual-metal gate TFETs (DMG-TFET). The ON-state current in a TFET depends on band-to-band tunneling (BTBT) across the junction between the source and ...
Prasad, Miriyala Durga, Saini, Gaurav
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Bandgap modulated phosphorene based gate drain underlap double-gate TFET
, 2018 In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Dip Joti Paul +2 more
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Analytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET
ECTI Transactions on Electrical Engineering, Electronics, and Communications, 2014 In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Approximation Technique.
T.S.Arun Samuel +2 more
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TFET NDR skewed inverter based sensing method
, 2016 International audienceMany of CMOS SRAMs (like 8T-SRAMs), DRAMs, non-volatile memories and TFET SRAMs use single ended read. Optimization of such sensing schemes is critical. Conventional single ended sensing requires either full discharge of bitline (BL)
Makosiej, Adam +5 more
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A source drain symmetric and interchangeable bidirectional tunneling field effect transistor
AIP Advances, 2018 A novel bidirectional tunneling field effect transistor with source drain symmetric and interchangeable functions (SDSI BT FET) is proposed in this work.
Xiaoshi Jin +3 more
doaj +1 more source
P-Type Tunnel FETs With Triple Heterojunctions
IEEE Journal of the Electron Devices Society, 2016 A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly ...
Jun Z. Huang +4 more
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Kalibratie van modellen voor de prestatievoorspelling van III-V TFET
, 2016 The Tunneling Field-Effect Transistor (TFET) is a promising candidate for future low-power logic applications. The carrier injection mechanism of the TFET is quantum mechanical Band-To-Band Tunneling (BTBT), which is accompanied by an energy filtering ...
Smets, Quentin
core
Robust Hybrid TFET-MOSFET Circuits in Presence of Process Variations and Soft Errors
, 2016 International audienceIn this work, to improve the timing yield of Tunnel Field Effect Transistor (TFET) circuits in the presence of process variations as well as their soft-error resiliency, we propose replacing some of TFET-based gates by MOSFET-based ...
Kamal, Mehdi +7 more
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Comparative Study of Steep Switching Devices for 1T Dynamic Memory
Tecnología en MarchaThis work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha +3 more
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Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering
607-613This article presents the Gate Overlap on Drain with Hetero Gate Dielectric TFET (GDHD-TFET), a novel tunnel FET structure aimed at addressing the low ON current and ambipolar leakage observed in traditional TFETs.
Avinash, Ganta, Saini, Gaurav
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