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Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM
Discover NanoIn this study, we designed and analyzed a single-transistor dynamic random-access memory (1 T-DRAM) based on an arch-shaped gate-all-around tunnel field-effect transistor (GAA ARCH-TFET), featuring an Si/SiGe heterostructure, for high-density memory ...
Seung Ji Bae +9 more
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MicromachinesThe enhancement of rectification efficiency in 2.45 GHz microwave wireless weak energy transmission systems is centred on rectifier device selection.
Weifeng Liu, Sihan Bi, Jianjun Song
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, 2011 A novel flash memory cell based on Tunneling Field Effect Transistor (TFET) is proposed and investigated in this paper. Based on the TFET structure, the proposed novel flash memory cell shows high programming efficiency, low power consumption, and good ...
Poren Tang +11 more
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Reversed C-shape Pocket Double Gate TFET with dual-κ Spacers
312-318The study delves into the evaluation of the Double Gate Tunnel Field-effect Transistors (DGTFET) structures, Reversed C-shape Pocket TFET (RCSP-TFET), and RCSP-TFET with dual-k spacers.
Vekariya, DevangKailashkumar +2 more
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Beyond TFET: Alternative mechanisms for sharp switch
, 2014 session: Novel SOI StructuresInternational audienceTunneling-based transistors (TFETs) have attracted interest due to their (theoretical) capability of switching more sharply than MOSFETs.
Cristoloveanu, S.
core
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures [PDF]
Solid-State Electronics, 2017 Abstract In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (gD) and intrinsic voltage gain (AV ...
Paula Ghedini Der Agopian +2 more
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Dielectrically modulated ferroelectric-TFET (Ferro-TFET) based biosensors
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2023Basab Das, Brinda Bhowmick
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COMPARISON BETWEEN HETERO-JUNCTION TECHNIQUE TFET AND CONVENTIONAL TFET
2021 International Conference on Computer Communication and Informatics (ICCCI), 2021Field Effect Transistors (FET) and its bio sensing application is of keen interest to many researchers in today's era, because of the favourable circumstances that they offer regarding being viable with the todays CMOS innovation, scaling down, practical large scale manufacturing, and name free location measure also called label-free detection process.
Aarchi Jain +3 more
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Optimization of Ferroelectric SELBOX TFET and Ferroelectric SOI TFET
ECS Journal of Solid State Science and Technology, 2020This paper explores the ferroelectric behavior of silicon doped hafnium oxide incorporated as gate dielectric in Selective Buried Oxide (SELBOX) TFET. In SELBOX TFET a small gap exists in the buried oxide and the electrical parameters are compared with the ferroelectric SOI TFET.
P. Ghosh, B. Bhowmick
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