Results 111 to 120 of about 1,965 (222)

P-Type Tunnel FETs With Triple Heterojunctions

IEEE Journal of the Electron Devices Society, 2016
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly ...
Jun Z. Huang, Pengyu Long, Michael Povolotskyi, Gerhard Klimeck, Mark J. W. Rodwell   +4 more
doaj   +1 more source

A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling FET (TFET) [PDF]

, 2011
A novel flash memory cell based on Tunneling Field Effect Transistor (TFET) is proposed and investigated in this paper. Based on the TFET structure, the proposed novel flash memory cell shows high programming efficiency, low power consumption, and good ...
Poren Tang, Ru Huang, Tang, Yu, Qianqian Huang, Yu Tang, Shiqiang Qin, Yimao Cai, Tang, Poren, Cai, Yimao, Qin, Shiqiang, Huang, Qianqian, Huang, Ru   +11 more
core   +1 more source

Reversed C-shape Pocket Double Gate TFET with dual-κ Spacers [PDF]

312-318The study delves into the evaluation of the Double Gate Tunnel Field-effect Transistors (DGTFET) structures, Reversed C-shape Pocket TFET (RCSP-TFET), and RCSP-TFET with dual-k spacers.
Vekariya, DevangKailashkumar, Kaur, Arashpreet, Saini, Gaurav   +2 more
core   +1 more source

Performance Assessment of GaAs Pocket-Doped Dual-Material Gate-Oxide-Stack DG-TFET at Device and Circuit Level

IET Circuits, Devices and Systems
This study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET).
Km. Sucheta Singh, Satyendra Kumar, Saurabh Chaturvedi, Kapil Dev Tyagi, Vaibhav Bhushan Tyagi   +4 more
doaj   +1 more source

Multi-Domain Performance Assessment of Double-Gate Tunnel FETs for Low-Power Sensing Applications

IEEE Access
In this paper, the effects of drain parasitics on DG-TFET performance, in terms of device efficiency, RF performance, and digital performance, are discussed.
Vikas Vijayvargiya, and Abhishek Narayan Tripathi   +1 more
doaj   +1 more source

Beyond TFET: Alternative mechanisms for sharp switch [PDF]

, 2014
session: Novel SOI StructuresInternational audienceTunneling-based transistors (TFETs) have attracted interest due to their (theoretical) capability of switching more sharply than MOSFETs.
Cristoloveanu, S.
core  

Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications. [PDF]

Sci Rep
Ashok T, Pandey CK.
europepmc   +1 more source

Modeling trap dynamics in oxide-engineered heterostructure TFETs for breast cancer detection. [PDF]

Sci Rep
Ghosh R, Saha P.
europepmc   +1 more source

Study of dielectric modulated dual source triple gate TFET for biosensing applications. [PDF]

Discov Nano
Cui G, Xu H.
europepmc   +1 more source

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. [PDF]

Micromachines (Basel), 2023
Shan C, Liu Y, Liu Y, Wang Y, Cai R, Su L.   +5 more
europepmc   +1 more source