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Design and Investigation of Junction-less TFET (JL-TFET) for the Realization of Logic Gates
NanoThe demand for energy-efficient electronics has propelled the exploration of alternative transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered significant interest as compared to MOSFETs, and our main focus is on getting a power-efficient device. This paper presents a comprehensive study on the utilization of TFETs
Bhushit Shah +3 more
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2020
TFETs are p-i-n gated junctions that operate in reverse regime. Figure 2.1 shows a conceptual TFET structure compared to a CMOS transistor. For an n-type (NTFET), p+ (n+) doping is used for the source (drain) while for a p-type (PTFET) n+ (p+) doping is used for the source (drain), the doping being reversed between the source and the drain as opposed ...
Navneet Gupta +4 more
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TFETs are p-i-n gated junctions that operate in reverse regime. Figure 2.1 shows a conceptual TFET structure compared to a CMOS transistor. For an n-type (NTFET), p+ (n+) doping is used for the source (drain) while for a p-type (PTFET) n+ (p+) doping is used for the source (drain), the doping being reversed between the source and the drain as opposed ...
Navneet Gupta +4 more
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Further Insights in TFET Operation
IEEE Transactions on Electron Devices, 2014Based on the band diagram analysis and systematic measurements, comprehensive description of the output characteristics of tunnel FETs (TFETs) operation is proposed. We show that both tunneling junctions have to be considered simultaneously to explain TFET behavior correctly. For the first time, we present and investigate in detail untruncated I D (V
Villalon, Anthony +5 more
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2016
As discussed in the previous sections, the SS of the MOSFET governed by the Boltzmann tyranny (herein, the theoretical limit of SS is ~60 mV/decade at 300 K) is a main bottleneck in scaling down the power supply voltage (V DD ) as well as extensively reducing the power consumption in integrated circuits (ICs).
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As discussed in the previous sections, the SS of the MOSFET governed by the Boltzmann tyranny (herein, the theoretical limit of SS is ~60 mV/decade at 300 K) is a main bottleneck in scaling down the power supply voltage (V DD ) as well as extensively reducing the power consumption in integrated circuits (ICs).
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Realization of Logic Performance using Double Gate TFET (DG-TFET) and Ge source DG-TFET (s-Ge-TFET)
2023 3rd International conference on Artificial Intelligence and Signal Processing (AISP), 2023Hitesh Kumar Phulawariya +3 more
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Novel TFET circuits for high-performance energy-efficient heterogeneous MOSFET/TFET logic
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017TFET's steep subthreshold slope and asymmetric I DS -V DS characteristics enable energy-efficiency and novel circuits that are not possible with MOSFETs. Logic with low-V DD and memory with low-V MIN are required and possible with TFET.
Daniel H. Morris +5 more
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2017 IEEE International Symposium on Circuits and Systems (ISCAS), 2017
This paper investigates and evaluates analog and digital low-dropout linear voltage regulators (LDO) with FinFET, TFET and hybrid TFET-FinFET implementations. We utilize Sentaurus physics-based atomistic 3D TCAD mixed-mode simulations for device characteristics and HSPICE with look-up tables based on Verilog-A models calibrated with TCAD simulation ...
Chia-Ning Chang +4 more
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This paper investigates and evaluates analog and digital low-dropout linear voltage regulators (LDO) with FinFET, TFET and hybrid TFET-FinFET implementations. We utilize Sentaurus physics-based atomistic 3D TCAD mixed-mode simulations for device characteristics and HSPICE with look-up tables based on Verilog-A models calibrated with TCAD simulation ...
Chia-Ning Chang +4 more
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Heterojunction TFET Scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length
2013 IEEE International Electron Devices Meeting, 2013The Tunneling Field Effect Transistor (TFET) is of interest for future low-power technologies due to its steep subthreshold-slope (SS) [1, 2]. In addition to understanding TFET's prospects for future technology nodes [3], we also need to assess if it enables continued scaling required for increasing transistor density.
Uygar E. Avci, Ian A. Young
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Design and Performance Analysis of Polarity Control Junctionless TFET (PC-JL-TFET)-Based Biosensor
Journal of Circuits, Systems and ComputersThis paper proposes a novel polarity-control junctionless tunnel field-effect transistor (PC-JL-TFET)-based biosensor for the label-free detection of biomolecule species in efficient ways. Unlike conventional designs, the polarity-control concept induces the generation of drain (n[Formula: see text]) and source (p[Formula: see text]) regions inside ...
Mukesh Kumar Bind +2 more
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2020
Cost and power efficiency are an important aspect for applications such as Internet-of-Things (IoT) and Wireless-Sensor Nodes (WSN). In SoCs optimized for these specification, key focus is put on SRAMs and flip-flops as they are the main contributors to area, energy, and leakage.
Navneet Gupta +4 more
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Cost and power efficiency are an important aspect for applications such as Internet-of-Things (IoT) and Wireless-Sensor Nodes (WSN). In SoCs optimized for these specification, key focus is put on SRAMs and flip-flops as they are the main contributors to area, energy, and leakage.
Navneet Gupta +4 more
openaire +1 more source