Results 101 to 110 of about 1,665 (175)

Kalibratie van modellen voor de prestatievoorspelling van III-V TFET

, 2016
The Tunneling Field-Effect Transistor (TFET) is a promising candidate for future low-power logic applications. The carrier injection mechanism of the TFET is quantum mechanical Band-To-Band Tunneling (BTBT), which is accompanied by an energy filtering ...
Smets, Quentin
core  

Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide

, 2016
In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enchance the current drive. Compared with conventional DG-TFET,the propsed TFET has steeper average subthreshold swing (SS), larger on ...
Zhang, Lining, Lining Zhang, Zhonghua Yu, Yu, Zhonghua, Yunpeng Dong, Dong, Yunpeng, Xinnan Lin, Lin, Xinnan   +7 more
core   +1 more source

Comparative Study of Steep Switching Devices for 1T Dynamic Memory

Tecnología en Marcha
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha, Hasan Raza Ansari, Leonard Register, Sanjay Banerjee   +3 more
doaj   +1 more source

Development of TFET 0.13 ��m standard cell library for ultra-low power applications

, 2015
Wearable medical devices and smart meters usually need low standby power consumption and ultra-low operating voltage, the shortcoming of traditional CMOS shutoff feature due to sub-threshold swing, limit the size narrowing.
Xin'an Wang, Gao, Fang, Fang Gao, Jipan Huang, Chen, Hongying, Hongying Chen, Huang, Jipan, Wang, Xin'An   +7 more
core   +1 more source

Fringe-fields-modulated double-gate tunnel-FET biosensor

Scientific Reports
This paper aims to evaluate a groundbreaking bio-TFET that utilizes the fringe fields capacitance concept to detect neutral and charged biomolecules. While facilitating fabrication process and scalability, this innovative bio-TFET is able to rival the ...
Iman Chahardah Cherik, Saeed Mohammadi
doaj   +1 more source

Electron-Hole Bilayer TFET: Experiments and Comments

, 2014
We investigate Si/Si0.85Ge0.15 fully depleted-SOI tunnel FET (TFET) devices operated in the electron-hole bilayer (EHB) mode. The application of negative bias on front gate and positive bias on back gate results in confined hole and electron layers that ...
Iwai, Hiroshi, Alexander Zaslavsky, Hiroshi Iwai, Le Royer, Cyrille, Zaslavsky, Alexander, Yan Wu, Cyrille Le Royer, REVELANT, Alberto, Villalon, Anthony, Wu, Yan, Cristoloveanu, Sorin, Sorin Cristoloveanu, Anthony Villalon   +12 more
core   +1 more source

Performance Assessment of GaAs Pocket-Doped Dual-Material Gate-Oxide-Stack DG-TFET at Device and Circuit Level

IET Circuits, Devices and Systems
This study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET).
Km. Sucheta Singh, Satyendra Kumar, Saurabh Chaturvedi, Kapil Dev Tyagi, Vaibhav Bhushan Tyagi   +4 more
doaj   +1 more source

Performance Characterization of Dual-Metal Triple- Gate-Dielectric (DM_TGD) Tunnel Field Effect Transistor (TFET)

: Since, Dual Metal Gate (DMG) technology alone is not enough to rectify the problem of low ON current and large ambipolar current in the TFET, therefore, a novel TFET structure, known as dual metal triple-gate-dielectric (DM_TGD) TFET, has been proposed.
Soong, Lim Way, Singh, Ajay Kumar, Fui, Tan Chun   +2 more
core   +1 more source

Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector

, 2017
Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-
Memisevic, E., Seabaugh, A.,, J. Zhang, Fay, P., P. Fay, L. E. Wernersson, Ytterdal, T.,, Wernersson, L. E., T. Ytterdal, C. Alessandri, Zhang, J.,, Wernersson, L. E.,, Fay, P.,, Alessandri, C., A. Seabaugh, Ytterdal, T., Alessandri, C.,, Seabaugh, A., Memisevic, E.,, Lund University., Zhang, J., E. Memisevic   +21 more
core   +1 more source

Multi-Domain Performance Assessment of Double-Gate Tunnel FETs for Low-Power Sensing Applications

IEEE Access
In this paper, the effects of drain parasitics on DG-TFET performance, in terms of device efficiency, RF performance, and digital performance, are discussed.
Vikas Vijayvargiya, and Abhishek Narayan Tripathi   +1 more
doaj   +1 more source