Results 101 to 110 of about 1,965 (222)

Gallium Nitride in Heterogeneous Photocatalysis: Fundamental Insights and Emerging Trends

ChemistryEurope, Volume 3, Issue 6, November 11, 2025.
Gallium nitride is a binary III–V direct band gap semiconductor. Recently, it has emerged as a promising material for next‐generation heterogeneous photocatalytic systems due to its unique electronic and structural properties. This review outlines the fundamental principles and key design strategies of heterogeneous photocatalysis and provides a ...
Hyotaik Kang, Chao‐Jun Li
wiley   +1 more source

From All-Si Nanowire TFETs Towards III-V TFETs

, 2012
Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device performance.
openaire   +1 more source

Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy

Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.
Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou, Jiaru Zhang, Guanghui Ren, Bao Yue Zhang, Jian Zhen Ou   +4 more
wiley   +1 more source

Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors

Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.
Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +4 more
wiley   +1 more source

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

IEEE Access, 2019
Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation.
Xiangzhan Wang, Zhouquan Tang, Lei Cao, Jingchun Li, Yang Liu   +4 more
doaj   +1 more source

Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions [PDF]

, 2020
In this work, the impact of the nanowire TFET diameter on analog parameters in "weak" and "strong inversion" conditions is analyzed. Its relation with the current conduction mechanism is also studied.
C C M Bordallo, P G D Agopian, V B Sivieri, E Simoen, A Vandooren, J A Martino, R Rooyackers, C Claeys, A Thean   +8 more
core  

Performance Characterization of Dual-Metal Triple- Gate-Dielectric (DM_TGD) Tunnel Field Effect Transistor (TFET) [PDF]

: Since, Dual Metal Gate (DMG) technology alone is not enough to rectify the problem of low ON current and large ambipolar current in the TFET, therefore, a novel TFET structure, known as dual metal triple-gate-dielectric (DM_TGD) TFET, has been proposed.
Soong, Lim Way, Singh, Ajay Kumar, Fui, Tan Chun   +2 more
core   +2 more sources

Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector [PDF]

, 2017
Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-
Memisevic, E., Seabaugh, A.,, J. Zhang, Fay, P., P. Fay, L. E. Wernersson, Ytterdal, T.,, Wernersson, L. E., T. Ytterdal, C. Alessandri, Zhang, J.,, Wernersson, L. E.,, Fay, P.,, Alessandri, C., A. Seabaugh, Ytterdal, T., Alessandri, C.,, Seabaugh, A., Memisevic, E.,, Lund University., Zhang, J., E. Memisevic   +21 more
core   +1 more source

Comparative Study of Steep Switching Devices for 1T Dynamic Memory

Tecnología en Marcha
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero ...
Nupur Navlakha, Hasan Raza Ansari, Leonard Register, Sanjay Banerjee   +3 more
doaj   +1 more source

A source drain symmetric and interchangeable bidirectional tunneling field effect transistor

AIP Advances, 2018
A novel bidirectional tunneling field effect transistor with source drain symmetric and interchangeable functions (SDSI BT FET) is proposed in this work.
Xiaoshi Jin, Yunxiang Gao, Xi Liu, Jong-Ho Lee   +3 more
doaj   +1 more source