Results 81 to 90 of about 1,965 (222)
Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering [PDF]
607-613This article presents the Gate Overlap on Drain with Hetero Gate Dielectric TFET (GDHD-TFET), a novel tunnel FET structure aimed at addressing the low ON current and ambipolar leakage observed in traditional TFETs.
Avinash, Ganta, Saini, Gaurav
core +1 more source
Bandgap modulated phosphorene based gate drain underlap double-gate TFET [PDF]
, 2018 In this work, a novel bandgap modulated gate drain underlap (BM-GDU) structure of tunnel-FET exhibiting suppressed ambipolar characteristics and steep SS is proposed by applying layer dependent bandgap and electron affinity property of 2-D material ...
Dip Joti Paul +2 more
core +1 more source
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
doaj +1 more source
IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.This paper presents a novel architecture the diagonal tunneling dielectrically modulated tunnel field effect transistor (DT‐DMTFET) for label‐free biosensing applications. The study employs TCAD (Silvaco TCAD) simulations to comprehensively analyze the behavior of the DT‐DMTFET biosensor focusing on key parameters such as drain current, sub‐threshold ...
I. Rama Satya Nageswara Rao +2 more
wiley +1 more source
Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET [PDF]
, 2020 This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor.
Hashim, Yasir +5 more
core +1 more source
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
IEEE Journal of the Electron Devices Society, 2016 A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen +4 more
doaj +1 more source
Analytical Approach and Simulation of GaN Single Gate TFET and Gate All around TFET
ECTI Transactions on Electrical Engineering, Electronics, and Communications, 2014 In this work, we investigate the impact of Gallium Nitride (GaN) based Single Gate Tunnel field effect transistors (SG TFET) and Gate All Around (GAA) TFET by using analytical models. The models are derived by solving the 2D-Poisson’s equation and Parabolic Approximation Technique.
T.S.Arun Samuel +2 more
openaire +2 more sources
Micro &Nano Letters, Volume 21, Issue 1, January/December 2026.This study presents a numerical quantum transport analysis of graphene nanoribbon field‐effect transistors (GNRFETs) using the non‐equilibrium Green's function (NEGF) formalism. The results show that reducing the channel length and optimizing dielectric materials, such as HfSiO4, significantly enhance ON‐state current and the Ion/Ioff ratio.
Mahamudul Hassan Fuad
wiley +1 more source
Kalibratie van modellen voor de prestatievoorspelling van III-V TFET [PDF]
, 2016 The Tunneling Field-Effect Transistor (TFET) is a promising candidate for future low-power logic applications. The carrier injection mechanism of the TFET is quantum mechanical Band-To-Band Tunneling (BTBT), which is accompanied by an energy filtering ...
Smets, Quentin
core
Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide [PDF]
, 2016 In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enchance the current drive. Compared with conventional DG-TFET,the propsed TFET has steeper average subthreshold swing (SS), larger on ...
Zhang, Lining +7 more
core +1 more source