Results 81 to 90 of about 1,665 (175)
Illuminating Quantum Phenomena in 2D Materials: The Power of Optical Spectroscopy
Advanced Optical Materials, Volume 13, Issue 31, November 5, 2025.Atomically thin 2D materials host quantum tunnelling, plasmonic and excitonic phenomena driven by reduced dimensionality and strong many‐body interactions. This review links these effects to state‐of‐the‐art optical probes—NSOM, pump–probe, CARS, TRR, and optical frequency comb spectroscopy—highlighting how their ultrahigh spatial–temporal resolution ...
Yuhui Zhou +4 more
wiley +1 more source
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj +1 more source
Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors
Advanced Electronic Materials, Volume 11, Issue 18, November 4, 2025.Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang +4 more
wiley +1 more source
Ultra-Low-Power compact TFET Flip-Flop design for high-performance low-voltage applications
, 2016 International audienceIn this paper, we propose a novel TFET Flip-Flop (TFET-FF) designed to address the requirements of ULP (Ultra-Low-Power) applications, like IoT (Internet of Things), while maintaining high performance.
Makosiej, Adam +9 more
core +1 more source
From Classical Ferroelectricity to Emerging Low‐Dimensional Phases
Advanced Physics Research, Volume 4, Issue 11, November 2025.Ferroelectricity is undergoing a renaissance, moving from classical perovskites to hafnia‐based thin films and low‐dimensional van der Waals crystals. Recent advances reveal exotic polarization mechanisms, ultrathin stability, and coupling with topology and valley physics.
Marius Adrian Husanu, Dana G. Popescu
wiley +1 more source
From All-Si Nanowire TFETs Towards III-V TFETs
, 2012 Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device performance.
openaire +1 more source
Nano Select, Volume 6, Issue 11, November 2025.In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve ground breaking sensitivity. DD‐DG‐STFET sensitivity was calculated by examining steric hindrance across various patterns, including concave and convex, as well ...
Anusuya Periyasami, Prashanth Kumar
wiley +1 more source
Impact of process and device dimensions on Bio-TFET Sensitivity
, 2019 This paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials localized over the drain to gate ...
Agopian, P. G.D. [UNESP] +2 more
core +1 more source
From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
, 2021 International audienceIn this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are designed using either 32 nm or Tunnel-FET (TFET) technology.
Taco, Ramiro +4 more
core +1 more source
Performance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective
, 2022 Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing the importance of high performance while maintaining energy efficiency to ensure long battery life.
Luis Miguel Prócel +5 more
core +1 more source