Results 41 to 50 of about 2,142 (219)
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
Performance Analysis of Double Material Gate (DG) -TFET with Channel Doping
, 2022 Double Material Gate (DG) Tunnel Field Effect Transistor (TFET) is proposed in this paper with current semiconductor materials analogous to Silicon dioxide (Sio2) and Hafnium Oxide (Hfo2) in 5 nm regime with symmetrical Gate to resolve the challenges ...
V, Raju +6 more
core +1 more source
A New On-Chip ESD Strategy Using TFETs-TCAD Based Device and Network Simulations
IEEE Journal of the Electron Devices Society, 2018 For the first time, this paper reports the quasi-static behavior and the applicability of the tunnel field effect transistor (TFET) for the on-chip electrostatic discharge (ESD) protection. ESD evaluations are performed on 28-nm fully depleted silicon-on-
Radhakrishnan Sithanandam +1 more
doaj +1 more source
The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian +6 more
wiley +1 more source
Investigation of gate leakage current in TFET: A semi-numerical approach
Alexandria Engineering Journal, 2023 Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace conventional MOSFETs in low-power applications. However, there are many challenges that should be overcome to efficiently operate the TFET.
N.M.S. Tawfik +6 more
doaj +1 more source
Electron‐Wave Interference in Zener Tunneling Induced by Dopant Clusters in Silicon pn Junctions
Advanced Quantum Technologies, Volume 9, Issue 7, July 2026.Current oscillations are revealed in the Zener tunneling regime of Si nanoscale pn junctions and are attributed to the interference of coherent electron‐waves in band‐to‐band tunneling transport. Temperature dependence, simulations of random dopant distributions, and numerical interference calculations collectively demonstrate that the interference ...
Daris Alfafa +4 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET).
Aryan Afzalian +4 more
doaj +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
RF energy harvesting using emerging TFET technology
, 2016 Radio frequency (RF) energy harvesting circuit using a 20 nm InAs double-gate n-channel TFET has been studied. RF-DC converter using a two-stage cross-coupled rectifier is evaluated.
null Jiann-Shiun Yuan +3 more
core +1 more source
, 2023 This paper presents the design of low-dropout volt-age regulators (LDO) using nanowire tunnel field-effect tran-sistors (TFETs) and nanowire MOSFET.
Nascimento Tolêdo, Rodrigo Do +5 more
core +1 more source