Results 11 to 20 of about 86,770,437 (171)

Design and TCAD Simulation of p+–n+ InAs‐Based TFET

Nano Select
Tunnel field‐effect transistors (TFETs) are promising for ultra‐low‐power electronics, yet their practical adoption is hindered by limited ON‐current and strong sensitivity of band‐to‐band tunneling (BTBT) to geometry, doping, and quantum confinement ...
Muhammad Elgamal, Mona El Sabbagh, Fatma Shokry, Ahmed Shaker, Mohammed El‐Banna, Mohamed Abouelatta   +5 more
doaj   +2 more sources

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces
Single‐walled carbon nanotubes (SWCNTs) are considered promising channel materials for post‐Moore nanoelectronics due to their excellent carrier transport properties.
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
doaj   +2 more sources

Progress in Strain Engineering of 2D-Integrated Heterostructures for Ultrasensitive Sensors. [PDF]

Adv Sci (Weinh)
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
Ton TB, Tran TS, Tran DK, Dau VT, Dao DV.   +4 more
europepmc   +2 more sources

Tunneling-Controlled Fusion of Short- and Long-Term Memory in SiO₂/HfO₂-Based Neuromorphic Device for Time-Series Prediction. [PDF]

Adv Sci (Weinh)
Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Yang C, Xu L, Su L, Wu Y.
europepmc   +2 more sources

Electrical Transport of Nb-Doped MoS₂ Homojunction P-N Diode: Investigating NDR and Avalanche Effect. [PDF]

Small
Niobium (Nb)‐doped molybdenum disulfide (MoS2) p‐type–n‐type (p–n) homojunction diodes are engineered using thickness‐controlled homo‐interfaces. Current–voltage (I–V) characteristics reveal gate‐tunable rectification, wavelength‐dependent photoresponse, and low‐bias switching.
Elahi E, Ahsan U, Khan MF, Aziz J, Chauhan P, Michałowski PP, Chen Y, Eda G, Loula M, Sarkar KJ, Sofer Z.   +10 more
europepmc   +2 more sources

Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region

Applied Sciences, 2019
The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET.
Faraz Najam, Yun Seop Yu
doaj   +1 more source

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Micromachines, 2020
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation.
Jang Hyun Kim, Hyun Woo Kim, Young Suh Song, Sangwan Kim, Garam Kim   +4 more
doaj   +1 more source

Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Micromachines, 2021
Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption.
Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie   +4 more
doaj   +1 more source

Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures

IEEE Journal of the Electron Devices Society, 2018
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control.
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken   +10 more
doaj   +1 more source

Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

AIP Advances, 2019
Operation mechanisms and electrical characteristics of tunneling field-effect transistors (TFETs) employing a hetero tunneling junction by utilizing an n-type oxide-semiconductor (OS) and a p-type group-IV-semiconductor are comprehensibly analyzed.
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi   +4 more
doaj   +1 more source