Results 61 to 70 of about 573 (171)
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq +4 more
wiley +1 more source
Effects of the Channel Length on the Nanoscale Field Effect Diode Performance [PDF]
Journal of Optoelectronical Nanostructures, 2018 Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-
arash rezaei +2 more
doaj
Devices, Functions, and Applications of Artificial Neuromorphic Visual Systems
Advanced Science, Volume 12, Issue 46, December 11, 2025.This review highlights recent advances in optoelectronic synapses for artificial neuromorphic vision, emphasizing their material systems, structural designs, and performance metrics. It further discusses visual neural networks enabled by these synapses, covering perception, memory, and recognition functionalities, and analyzes challenges in stability ...
Jiaxin Liu +4 more
wiley +1 more source
, 2012 In this paper, we investigate the band-to-band tunneling (BTBT) in Si/Ge and Si/Si1-xGex heterojunctions by employing a two-dimensional (2D) full band Monte Carlo (FBMC) heterojunction simulator.
Juncheng Wang +11 more
core +1 more source
Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.Vertical electric‑field‑induced bandgap narrowing in bilayer MoS2 dynamically reduces the Schottky barrier height, achieving sub‑60 mV/dec switching. Incorporating band‑edge shifts estimated from DFT results into transport simulations, the bilayer MoS2 SB‑FET achieves a 44.7 mV/dec subthreshold swing and 38 % faster CMOS inverter switching with 5 ...
Gyeong Min Seo +2 more
wiley +1 more source
, 2016 In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling(BTBT) probability is proposed and experimentally demonstrated.
Yang Zhao +11 more
core +1 more source
Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs [PDF]
, 2016 We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated.
Chern, Winston +3 more
core +1 more source
SiGe-Surrounded Bitline Structure for Enhancing 3D NAND Flash Erase Speed
Applied SciencesThree-dimensional NAND Flash has adopted the cell-over-peripheral (COP) structure to increase storage density. Unlike the conventional structure, the COP structure cannot directly increase the channel potential via substrate bias during the erase ...
Dohyun Kim, Wonbo Shim
doaj +1 more source
FlexMat, Volume 2, Issue 4, Page 510-532, December 2025.Degradable organic neuromorphic transistors represent a sustainable electronics platform tailored for future AI demands. By combining computational efficiency with eco‐friendly traits, these devices enhance both performance and sustainability. This review highlights progress in electronically controlled and optoelectronically reconfigurable transistors
Mingyi Ding, Deyang Ji, Wenping Hu
wiley +1 more source
Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
, 2017 Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits ...
Luu The Vinh +2 more
core +1 more source