Results 61 to 70 of about 86,770,437 (171)

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Advanced Functional Materials, Volume 36, Issue 1, 2 January 2026.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang   +5 more
wiley   +1 more source

Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar   +4 more
wiley   +1 more source

Leveraging Gate and Channel Engineering in Graphene Tunnel FET (GTFET) at Nano-Scale for Better Device Performance

Журнал нано- та електронної фізики
This research work mainly focuses on various gate and channel engineering performed on typical tunnel field effect transistors (TFETs) at nano scale. This step-by-step development of typical nano device TFET model is showcased in this research work, in ...
R. Dutta, D. Das
doaj   +1 more source

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Scientific Reports, 2017
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu   +10 more
doaj   +1 more source

Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2020
Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

University Symphonic Band, February 24, 1974

, 2017
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, February 24, 1974, program no. 155 of the Department of Music’s 1973-1974 season.Western Michigan University Symphonic Band, Carl Bjerregaard ...
Western Michigan University. Symphonic Band
core  

Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors

Advanced Electronic Materials
Doping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT ...
Chen‐Han Chou, Han‐Yi Huang, Hsin‐Yuan Chiu, Guan‐Zhen Wu, Bo‐Heng Liu, Chien‐Wei Chen, Chi‐Chung Kei, Chao‐Hsin Chien   +7 more
doaj   +1 more source

Masterworks for band

, 2016
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, November 17, 1991, 3:00 p.m., the 124th concert of the School of Music’s 1991-1992 season.University Symphonic Band ; Jeffrey Renshaw, conductor ...

core  

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj   +1 more source

Dopingless 1T DRAM: Proposal, Design, and Analysis

IEEE Access, 2019
In this paper, we have proposed a dopingless 1T DRAM (DL-DRAM) that utilizes the charge plasma concept. The proposed device employs a misaligned double-gate architecture to store holes and differentiates between the two logic states.
Akhil James, Sneh Saurabh
doaj   +1 more source