Results 71 to 80 of about 573 (171)

Organic field‐effect transistors: Materials design, device physics, and contact engineering for high‐performance flexible electronics

Information &Functional Materials, Volume 2, Issue 4, Page 267-305, December 2025.
This review bridges molecular design with device engineering to address key challenges in organic transistors. By integrating materials chemistry with contact optimization, it provides pathways toward stable, high‐performance flexible electronics. Abstract Organic field‐effect transistors are widely recognized as key enabling components for low‐cost ...
Fenglan Kuang, Fei Wang, Dawei Duan, Yicong Ma, Xiaokang Sun, Soumitra Satapathi, Annie Ng, Haoran Lin, Zheng Li, Yufei Zhong, Hanlin Hu   +10 more
wiley   +1 more source

Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2020
Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage ...
Jo-Han Hung, Pei-Yu Wang, Yu-Chen Lo, Chih-Wen Yang, Bing-Yue Tsui, Chia-Hsiang Yang   +5 more
doaj   +1 more source

Exploring Double NDR Modulation and UV‐NIR Photodetection in MoS2/Sb2Se3 Heterostructures

Advanced Optical Materials, Volume 13, Issue 32, November 14, 2025.
In this study, a van der Waals Sb2Se3/MoS2 heterostructure exhibits dual negative differential resistance (NDR) peaks at room temperature. The first originates from band‐to‐band tunneling, while the second, triggered under laser illumination, is attributed to trap states and recombination dynamics.
Muhammad Suleman, Minwook Kim, Arslan Rehmat, Ehsan Elahi, Muhammad Asim, Muhammad Riaz, Sunil Kumar, Jongwan Jung, Yongho Seo   +8 more
wiley   +1 more source

Van der Waals heterojunctions with negative differential transconductance for broadband photodetection, multi‐valued logic, and artificial neuron

InfoMat, Volume 7, Issue 10, October 2025.
This work explores a combination of two ultra‐thin materials, indium selenide (InSe) and black phosphorus (BP), to create a highly efficient electronic device. This device exhibits negative differential transconductance (NDT), which is useful for developing low‐power, high‐speed logic circuits and neuromorphic (brain‐inspired) computing.
Muhammad Zubair, Yu Xu, Yangyang Wang, Xiaoyong Jiang, Jinshui Miao, Shenglan Hao, Bobo Tian, Junhao Chu, Chungang Duan   +8 more
wiley   +1 more source

Direct and indirect band-to-band tunneling in germanium-based TFETs

, 2012
: Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered.
Vandenberghe, William G., Kao, Kuo-Hsing, Sor\ue9e, Bart, Verhulst, Anne S., Groeseneken, Guido, De Meyer, Kristin   +5 more
core  

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj   +1 more source

Dopingless 1T DRAM: Proposal, Design, and Analysis

IEEE Access, 2019
In this paper, we have proposed a dopingless 1T DRAM (DL-DRAM) that utilizes the charge plasma concept. The proposed device employs a misaligned double-gate architecture to store holes and differentiates between the two logic states.
Akhil James, Sneh Saurabh
doaj   +1 more source

Investigation of homo-junction InGaAs band-to-band tunneling diodes

, 2011
Band-to-band tunneling transistors (TFETs) are very promising devices to replace the conventional MOSFETs at the end of the semiconductor road map and to reduce the power consumption of integrated circuits due to their less than 60 mV/dec subthreshold ...
Cho, Woo-Suhl
core  

Strained-Si [subscript 1-x]Ge [subscript x/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

, 2009
Strained pseudomorphic Si/Si [subscript 1-x]Ge [subscript x]/Si gate-controlled band-to-band tunneling (BTBT) devices have been analyzed with varying Ge composition up to 57% and p+ tunnel-junction (source) doping concentration in the 10 [superscript 19]
Nayfeh, Osama M., Antoniadis, Dimitri A., Hoyt, Judy L.   +2 more
core   +1 more source