Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices [PDF]
, 2019 Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way.
Asenov, Asen +14 more
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Tunable Doping Enabled by Dielectric Screening Layer in Carbon Nanotube Transistors
Advanced Electronic MaterialsDoping is a crucial technique for achieving high‐performance carbon nanotube (CNT) metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, excessive doping in the extension region can induce significant band‐to‐band tunneling (BTBT ...
Chen‐Han Chou +7 more
doaj +1 more source
, 2017 © 2017 IEEE. I. Introduction The growing demand for power efficient devices has accelerated the research into the use of the tunnel field-effect transistor (TFET) in future ultra-low power applications because of its promising potential for sub-60 mV/dec
Bart Soree +15 more
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Low Power Band to Band Tunnel Transistors [PDF]
, 2010 As scaling continues, the number of transistors per unit area and power density are both on the rise. A reduction in Vdd is highly desirable to reduce power consumption.
Bowonder, Anupama
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Efficient Quantum Mechanical Simulation of Band-to-band Tunneling
, 2015 In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wavefunction (WF) and density of states (DOS) corrections for both charge and BTBT ...
Pierpaolo Palestri +15 more
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Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-Temperature Application
IEEE AccessTunneling Field-Effect Transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFET) and could overcome the physical limit, which results in the ...
Chi-Cheng Tien, Yu-Hsien Lin
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Endurance and Retention Characteristics of SONOS EEPROMs Operated using BTBT Induced Hot Hole Erase
, 2006 Endurance and retention of SONOS EEPROMs operated using channel hot electron injection (CHEI) and band-to-band tunneling (BTBT) induced hot hole injection (HHI) are studied.
Kamohara, S. +11 more
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Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications
, 2016 The feasibility of medium-high fraction SiGe based FinFET pMOS devices for a sub-10nm CMOS logic technology from a performance (IEFF @ fixed IOFF) standpoint is evaluated, considering three key device aspects-stress, band-to-band-tunneling (BTBT), and ...
Jin, S. +29 more
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Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Applied Sciences, 2018 In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages.
Keyvan Narimani +4 more
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Investigations of Tunneling for Field Effect Transistors [PDF]
, 2012 Over 40 years of scaling dimensions for new and continuing product cycles has introduced new challenges for transistor design. As the end of the technology roadmap for semiconductors approaches, new device structures are being investigated as possible ...
Matheu, Peter
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