Results 101 to 110 of about 573 (171)

Tensile Strained Ge Tunnel Field-Effect Transistors: K . P Material Modeling and Numerical Device Simulation

, 2013
Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials.
Soree, Bart, Kao, Kuo-Hsing, Vandenberghe, William G. H., Verhulst, Anne S., Magnus, Wim, Van de Put, Maarten, De Meyer, Kristin   +6 more
core   +1 more source

Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FET

, 2013
We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor.
Ghosh, Ram Krishna, Mahapatra, Santanu
core   +1 more source

Leakage Minimization Technique for Nanoscale CMOS VLSI

, 2007
Because of the continued scaling of technology and supply-threshold voltage, leakage power has become more significant in power dissipation of nanoscale CMOS circuits.
Park, Nohpill, Kim, Yong-Bin, Choi, Minsu, Kim, Kyung Ki   +3 more
core   +1 more source

Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket

, 2015
This paper presents both experimental and TCAD simulation results on a planar tunneling field-effect transistor (TFET) using compressively strained Si0.45Ge0.55 on Si. Introducing a counter doped pocket at the source tunnel junction in combination with a
Trellenkamp, S., S. Blaeser, S. Wirths, S. Trellenkamp, Zhao, Q. T., S. Manti, Richter, S., Mantl, Siegfried, Wirths, S., Buca, D., D. Buca, S. Richter, Blaeser, S., Q. T. Zhao   +13 more
core   +1 more source

Physical investigation of strained Si nanowire band to band tunneling transistors and inverters

, 2014
The demand for continuous improvement of computation speed, power efficiency and complexity of logic circuits made of metal-oxide-semiconductor field-effect-transistors (MOSFET) has been satised over a few decades by scaling the device dimensions ...
Knoll, Lars
core  

Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology

The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing ...
Sonawane, Jay, Lashkare, Sandip, Kumar Singh, Ajay, Patil, Shubham, Gaurav, R., Kadam, Abhishek, Somappa, Laxmeesha, Deshmukh, Shreyas, Deshpande, Veeresh, Ganguly, Udayan   +9 more
core   +1 more source

Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices. [PDF]

Sci Rep
Shubham, Pandey RK.
europepmc   +1 more source

Two-Dimensional van der Waals Bilayer Heterostructure Towards Band-to-Band Tunneling and Photocatalytic Water Splitting Applications

The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet various application requirements has drawn considerable attention.
Ferdous, Naim
core  

In-cell bypass diodes for high-efficiency and shading-tolerant back contact silicon photovoltaic modules. [PDF]

Nat Commun
Tang H, Li Y, Lin H, Xue C, Wang G, Xu Y, Ye F, Fang L, Xu X, Gao P.   +9 more
europepmc   +1 more source

Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs. [PDF]

Nanomaterials (Basel)
Ma H, Gu S, Zhai M, Liu H.
europepmc   +1 more source