Results 221 to 230 of about 2,277 (292)

CMOS inverters for ammonia/amine sensors

2010 2nd Circuits and Systems for Medical and Environmental Applications Workshop (CASME), 2010
When detecting an analyte with organic electronic materials, there may be two or more materials that provide different types of responses. These materials can be integrated into an inverter or amplifier device configuration to exploit a synergistic response for increased selectivity and/or sensitivity.
Noah J. Tremblay, Howard E. Katz, Patrick Breysse   +2 more
openaire   +1 more source

Stochastic Behavior of a CMOS Inverter

2007 14th IEEE International Conference on Electronics, Circuits and Systems, 2007
As feature sizes of integrated circuits continue to shrink and demand for low power operation continues to increase, power supply voltages may eventually be reduced to the level where noise becomes significant compared with signals. This would cause digital logic circuits to exhibit non-deterministic behavior.
Peng Xu, Pamela Abshire
openaire   +1 more source

Improved Switching Speed of a CMOS Inverter Using Work-Function Modulation Engineering

IEEE Transactions on Electron Devices, 2018
This paper presents a detailed numerical analysis of work-function modulated cylindrical gate metal–oxide–semiconductor field-effect transistor (MOSFET)-based CMOS inverter.
B. Jena, S. Dash, G. P. Mishra
semanticscholar   +1 more source

The CMOS Inverter

2013
C. Hawkins, J. Segura, P. Zarkesh-Ha
openaire   +2 more sources

Modeling CMOS Gates Using Equivalent Inverters

2015 IEEE 18th International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2015
In this paper a complete approach for timing and power modeling and characterization of the CMOS gates is proposed. At first, a simplified but still accurate transistor current model is proposed taking into account the nanoscale effects which have a countable effect on the circuit behavior.
openaire   +1 more source

Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

International Electron Devices Meeting, 2018
For the first time, CMOS inverters with different numbers of vertically stacked junctionless (JL) nanosheets (NSs) are demonstrated. All fabrication steps were below 600 °C, and 8-nm thick poly-Si NSs with smooth surface roughness were formed by a dry ...
P. Sung, C. Chang, L. Chen, K. Kao, C. Su, Tzu-Han Liao, C.-C. Fang, C. Wang, T. Hong, Che-Yu Jao, Hui-Shun Hsu, S. Luo, Y.-S. Wang, H.-F. Huang, J. Li, Y. Huang, F. Hsueh, C. Wu, Y.-M. Huang, F. Hou, G. Luo, Y. Huang, Y.-L. Shen, W. C. Ma, K. Huang, K. Lin, S. Samukawa, Y. Li, G. Huang, Y. Lee, J. Li, W. Wu, J. Shieh, T. Chao, W. Yeh, Y. Wang   +35 more
semanticscholar   +1 more source

Hot-carrier degradation of CMOS-inverters

Technical Digest., International Electron Devices Meeting, 2003
Dynamic degradation effects in CMOS (complementary metal oxide semiconductor) inverters are investigated by monitoring the frequency shift of ring oscillators. Gate delay times down to 0.18 ns are used. A stress-time dependence of the degradation was found that disagrees with duty-cycle calculations in the degradation range of 1 to 10%.
W. Weber, L. Risch, W. Krautschneider, Q. Wang   +3 more
openaire   +1 more source

New capabilities of the CMOS inverter

IEEE Journal of Solid-State Circuits, 1988
Capabilities of the CMOS inverter are introduced that are based on the theory that for V/sub Tn/= mod V/sub Tn/ mod approximately=2/3V/sub SS/, a third high-impedance (HI) valid logic state is created between the zero and one states. By the generation of a 'HALF' level (=1/2V/sub SS/), the inverter can be used as a tristate inverter. Circuit techniques
openaire   +1 more source

Non-inverting regenerative CMOS logic circuits

Microelectronics Journal, 1985
Non-inverting regenerative CMOS logic circuits (non-inverting Schmitt circuits) consisting of an input logic circuit and two inverters connected as a flip-flop are proposed in the paper. Static and dynamic characteristics and normal operation conditions are analysed.
Zlatko V. Bundalo, Branko L. Dokić
openaire   +1 more source

First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping

Device Research Conference, 2018
Transition metal dichalcogenides (TMDs) as a family of 2D materials have received considerable attention due to their outstanding physical properties.
C. Pang, Zhihong Chen
semanticscholar   +1 more source