Results 21 to 30 of about 2,277 (292)

Contact engineering for organic CMOS circuits

JPhys Materials, 2023
Organic field-effect transistors (OFETs) have been widely studied, but there are still challenges to achieving large-scale integration in organic complementary metal–oxide–semiconductor (CMOS) circuits.
Quanhua Chen, Jiarong Cao, Yuan Liu, Rujun Zhu, Jinxiu Cao, Zhao Liu, Xing Zhao, Jianfei Wu, Guangan Yang, Li Zhu, Jie Wu, Zhihao Yu, Huabin Sun, Run Li, Shujian Xue, Binhong Li, Chee Leong Tan, Yong Xu   +17 more
doaj   +1 more source

Application of High-Frequency Leakage Current Model for Characterizing Failure Modes in Digital Logic Gates

Energies, 2021
In this paper, a predictive model is developed to characterize the impact of high-frequency electromagnetic interference (EMI) on the leakage current of CMOS integrated circuits.
Zahra Abedi, Sameer Hemmady, Thomas Antonsen, Edl Schamiloglu, Payman Zarkesh-Ha   +4 more
doaj   +1 more source

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE Journal of the Electron Devices Society, 2022
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices.
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal   +9 more
doaj   +1 more source

Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter

IEEE Journal of the Electron Devices Society, 2021
In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
doaj   +1 more source

Design of Parallel Analog to Digital Converter Based on Darlington CMOS Inverter

Gazi Üniversitesi Fen Bilimleri Dergisi, 2018
This article presents a 4-bit parallel analog-to-digital converter was designed by using Darlington CMOS Inverter which is operated in accordance with CMOS threshold voltage. Thus, there is no need to use resistance array block for obtaining quantization
Oktay AYTAR
doaj   +1 more source

Low-Power Adaptive Integrate-and-Fire Neuron Circuit Using Positive Feedback FET Co-Integrated With CMOS

IEEE Access, 2021
The most important aspect of an artificial neuron circuit is energy consumption. An analog neuron circuit has a critical problem in that the energy consumption in the steady-state due to a short-circuit current in the first inverter is quite large.
Min-Woo Kwon, Kyungchul Park, Byung-Gook Park   +2 more
doaj   +1 more source

Analysis of the subthreshold CMOS logic inverter

Ain Shams Engineering Journal, 2018
There is no doubt that operating the MOSFET transistor in the subthreshold region, where the power-supply voltage is less than the threshold voltage, has an increasing importance due to the reduced power consumption.
Sherif M. Sharroush
doaj   +1 more source

A Modified NMOS Inverter With Rail-To-Rail Output Swing and Its Application in the Gate Driver Integrated by Metal Oxide TFTs

IEEE Journal of the Electron Devices Society, 2021
A modified NMOS inverter employing output feedback theme has been proposed in this paper. The feedback structure can guarantee high voltage output at a wider range of low voltage input.
Pei-An Zou, Jun-Wei Chen, Kai Xiang, Lei Zhou, Jian-Hua Zou, Miao Xu, Lei Wang, Wei-Jing Wu, Jun-Biao Peng, Mansun Chan   +9 more
doaj   +1 more source

Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-Temperature Application

IEEE Access
Tunneling Field-Effect Transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal-oxide-semiconductor field-effect transistors (MOSFET) and could overcome the physical limit, which results in the ...
Chi-Cheng Tien, Yu-Hsien Lin
doaj   +1 more source

Analysis of Single-Event Transient in Tunneling-Based Ternary CMOS With Gate-All-Around Structure

IEEE Access
In this study, single-event transient (SET) characteristics in tunneling-based ternary complementary MOS device (T-CMOS) with gate-all-around structure (i.e., nanosheet FET) were analyzed for the first time.
Hyeong-Chan Son, Hyunwoo Kim
doaj   +1 more source