Results 31 to 40 of about 2,277 (292)

Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter

open access: yesAdvances in Materials, 2019
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large‐area electronics and circuits strongly relies on wafer‐scale, selective growth of quality 2D TMDs ...
Ming-Hui Chiu   +13 more
semanticscholar   +1 more source

Two proposed BiCMOS inverters with enhanced performance

open access: yesAin Shams Engineering Journal
The BiCMOS technology finds wide applications when driving heavy loads such as those associated with off-chip loads or long runs within the chip. In this paper, two novel BiCMOS inverters that depend on using Darlington BJT pairs are presented. Also, the
Sherif M. Sharroush, Yasser S. Abdalla
doaj   +1 more source

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

open access: yesIEEE Journal of the Electron Devices Society, 2022
For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET), which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to standard CMOS with nanosheet FETs in perspective of CMOS inverter performance ...
Seung-Geun Jung   +4 more
doaj   +1 more source

Reliable SRAM using NAND‐NOR Gate in beyond‐CMOS QCA technology

open access: yesIET Computers & Digital Techniques, 2021
The rise in complementary metal‐oxide semiconductor (CMOS) limitations has urged the industry to shift its focus towards beyond‐CMOS technologies to stay in race with Moore’s law.
Marshal Raj   +2 more
doaj   +1 more source

Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED

open access: yesAin Shams Engineering Journal, 2021
Designing a high-quality switch block ensures the efficient data transmission in digital circuits and systems. In this paper, an innovative 2:1 multiplexer is successfully designed based on the previously proposed side-contacted field-effect diodes (S ...
Tara Ghafouri, Negin Manavizadeh
doaj   +1 more source

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

open access: yesAdvanced Electronic Materials, 2023
2D MoTe2 is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical‐vapor‐deposition‐grown MoTe2 usually presents p‐type characteristics.
Zhixuan Cheng   +9 more
doaj   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

MPI‐Guided Photothermal Therapy of Prostate Cancer Using Stem Cell Delivery of Magnetotheranostic Nanoflowers

open access: yesAdvanced Functional Materials, EarlyView.
Tumor‐tropic human mesenchymal stem cells (hMSCs) were used as delivery vehicles for magnetotheranostic gold–iron oxide nanoflowers. Magnetic particle imaging of the iron component demonstrated widespread intratumoral distribution and sustained retention in contrast to injection of naked nanoflowers.
Behnaz Ghaemi   +7 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

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