Results 41 to 50 of about 2,277 (292)

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Crosstalk Peak Overshoot Analysis of VLSI Interconnects

International Journal of Emerging Research in Engineering, Science, and Management, 2023
As technology extended from deep sub-micron technology to nanometer regimes, the conventional copper (Cu) wire will not be able to continue. Now a substitute approaches such as Carbon Nano Tube (CNT) interconnects have been suggested to ignore the ...
C. Venkataiah, D. Rajesh Setty, N. Ramanjaneyulu, Y. Mallikarjuna Rao   +3 more
doaj   +1 more source

3D‐Printed Porous Hydroxyapatite Formed via Enzymatic Mineralization

Advanced Functional Materials, EarlyView.
Bone combines lightness, strength, and the ability to heal, inspiring new materials design. This work introduces a room‐temperature, enzyme‐mediated 3D printing method to create porous hydroxyapatite scaffolds. The process avoids energy‐intensive sintering, preserves bioactivity, and allows control over porosity and mineralization.
Francesca Bono, Anna Puiggalí‐Jou, Greta Cocchi, Mariangela Miccoli, Katharina Maniura‐Weber, Marcy Zenobi‐Wong, Esther Amstad   +6 more
wiley   +1 more source

Crosstalk Analysis of On-chip VLSI Interconnects

International Journal of Emerging Research in Engineering, Science, and Management, 2022
In this paper dynamic crosstalk is analyzed for coupled on-chip VLSI interconnects in different conditions. The proposed work has taken the MOS transistor analytical expressions. In this work, calculated the transition delays and different timings of the
Manjula Jayamma, N. Ramanjaneyulu, Anchula Sathish, Y. Mallikarjuna Rao   +3 more
doaj   +1 more source

The Investigation of CMOS Inverter Based Comparator Circuits

2018 2nd International Symposium on Multidisciplinary Studies and Innovative Technologies (ISMSIT), 2018
In this study, the performance of the CMOS inverter circuit with active load, which can be used as a comparator structure in analogue digital converter circuits, is investigated with respect to other CMOS inverter circuits by using 0.25μm CMOS technology library in Cadence Virtuoso 6.13 design program.
Keleş, Fatmanur, Aytar, Oktay
openaire   +1 more source

Mimicking Block Copolymer Self‐Assembly with One‐Pot Synthesized Polyphosphoester Gradient Copolymers

Advanced Functional Materials, EarlyView.
Degradable Polyphosphoester (PPE) gradient copolymers (GCPs) are synthesized via one‐pot copolymerization. We show that GCPs self‐assemble into nanostructures like polymersomes, effectively mimicking the behavior of traditional BCPs. The gradient strength is key, with softer gradients favoring micelles.
Suna Azhdari, Timo Rheinberger, Ulrich Mansfeld, Yorick Post, Jürgen Linders, Olga Koshkina, André H. Gröschel, Frederik R. Wurm   +7 more
wiley   +1 more source

A low power varactor based digitally controlled oscillator design in 180 nm CMOS technology

SN Applied Sciences, 2023
This paper reports two distinct architectures for digitally-controlled oscillators (DCOs) utilizing MOS varactor, designed in TSMC 180 nm CMOS technology. The first DCO design employs a CMOS inverter, while the second design features a Three-Transistors (
Shweta Dabas, Manoj Kumar
doaj   +1 more source

A Subthreshold Biased CMOS Ring Oscillator Model Design in 180-nm Process

Journal of ICT Research and Applications, 2023
In this paper, a 180-nm CMOS ring oscillator design, made with halo-implanted transistors and operating in the weak inversion region, is proposed, based on an undergraduate integrated circuit design course methodology for building logic gates and ...
Vinícius Henrique Geraldo Correa, Rodrigo Aparecido da Silva Braga, Dean Bicudo Karolak, Fernanda Rodrigues Silva   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source