Results 31 to 40 of about 13,148 (261)

CMOS Magnetic Sensors for Wearable Magnetomyography [PDF]

2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), 2018
Magnetomyography utilizes magnetic sensors to record small magnetic fields produced by the electrical activity of muscles, which also gives rise to the electromyogram (EMG) signal typically recorded with surface electrodes. Detection and recording of these small fields requires sensitive magnetic sensors possibly equipped with a CMOS readout system ...
Hadi Heidari, Siming Zuo, Agamemnon Krasoulis, Kianoush Nazarpour   +3 more
openaire   +2 more sources

Enhancing Strength and Electrical Conductivity in Al–Zr–Sc Conductor Alloys Through Sn and Sr Microalloying and Two‐Step Aging Treatment

Advanced Engineering Materials, EarlyView.
Trace additions of Sn and Sr combined with a two‐step aging treatment are shown to enhance the microstructure and performance of Al–Zr–Sc conductor alloys. Strength and electrical conductivity increase concurrently through accelerated precipitation of fine Al3(Sc, Zr) precipitates and improved dislocation resistance, offering a cost‐effective pathway ...
Quan Shao, Emad M. Elgallad, Alexandre Maltais, X.‐Grant Chen   +3 more
wiley   +1 more source

Impact of proton radiation and annealing of CMOS image sensors on star sensor performance

AIP Advances
Star sensors play a crucial role as high-precision optical attitude navigation devices in satellite attitude control systems. The CMOS image sensor is an important component of the imaging system of the star sensor and experiences performance degradation
Yi-Hao Cui, Jie Feng, Yu-Dong Li, Bingkai Liu, Lin Wen, Qi Guo   +5 more
doaj   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Monolithic Sensor Integration in CMOS Technologies

IEEE Sensors Journal, 2023
This work was supported in part by Baolab Microsystems; in part by the Spanish Ministry of Science, Innovation and Universities (MCIN); in part by the State Research Agency (AEI); in part by the European Social Fund (ESF) under Project RTI2018-099766-B-I00; in part by MCIN/AEI/10.13039/501100011033 under Grant PID2021-123535OB-I00; and in part by ERDF,
Daniel Fernandez, Piotr Michalik, Juan Valle, Saoni Banerji, Josep Maria Sanchez-Chiva, Jordi Madrenas   +5 more
openaire   +3 more sources

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

IEEE Journal of the Electron Devices Society, 2018
Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion.
Harald Homulle, Lin Song, Edoardo Charbon, Fabio Sebastiano   +3 more
doaj   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source