Results 41 to 50 of about 76,358 (302)

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

Advanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham, Chenyu Wen, Mohammad Hadi Khaksaran, Won‐Yong Lee, Javier Cruz, Klas Hjort, Dongping Wu, Shi‐Li Zhang   +7 more
wiley   +1 more source

Monolithic Sensor Integration in CMOS Technologies

IEEE Sensors Journal, 2023
This work was supported in part by Baolab Microsystems; in part by the Spanish Ministry of Science, Innovation and Universities (MCIN); in part by the State Research Agency (AEI); in part by the European Social Fund (ESF) under Project RTI2018-099766-B-I00; in part by MCIN/AEI/10.13039/501100011033 under Grant PID2021-123535OB-I00; and in part by ERDF,
Daniel Fernandez, Piotr Michalik, Juan Valle, Saoni Banerji, Josep Maria Sanchez-Chiva, Jordi Madrenas   +5 more
openaire   +3 more sources

Enhancing Strength and Electrical Conductivity in Al–Zr–Sc Conductor Alloys Through Sn and Sr Microalloying and Two‐Step Aging Treatment

Advanced Engineering Materials, EarlyView.
Trace additions of Sn and Sr combined with a two‐step aging treatment are shown to enhance the microstructure and performance of Al–Zr–Sc conductor alloys. Strength and electrical conductivity increase concurrently through accelerated precipitation of fine Al3(Sc, Zr) precipitates and improved dislocation resistance, offering a cost‐effective pathway ...
Quan Shao, Emad M. Elgallad, Alexandre Maltais, X.‐Grant Chen   +3 more
wiley   +1 more source

From vertex detectors to inner trackers with CMOS pixel sensors

, 2016
The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL.
Baudot, J., Besson, A., Claus, G., Goffe, M., Pérez, A. Pérez, Spiriti, E., Winter, M.   +6 more
core   +3 more sources

Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]

, 2010
The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Paillet, Philippe, Virmontois, Cédric   +4 more
core   +4 more sources

Deterministic Detection of Single Ion Implantation

Advanced Engineering Materials, EarlyView.
Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead, Lok Kan Wan, Maddison Coke, Janet Jacobs, Nicholas F. L. Collins, Mark C. Rosamond, Richard J. Curry   +6 more
wiley   +1 more source

Impact of proton radiation and annealing of CMOS image sensors on star sensor performance

AIP Advances
Star sensors play a crucial role as high-precision optical attitude navigation devices in satellite attitude control systems. The CMOS image sensor is an important component of the imaging system of the star sensor and experiences performance degradation
Yi-Hao Cui, Jie Feng, Yu-Dong Li, Bingkai Liu, Lin Wen, Qi Guo   +5 more
doaj   +1 more source

Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]

, 2012
1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Allegret, Stephane, Carrere, Jean-Pierre, Goiffon, Vincent, Magnan, Pierre, Place, Sébastien, Roy, François   +5 more
core   +1 more source

Copper Nanocrystallization in Anodic Oxide Films of Ti–Cu‐Based Bulk Metallic Glass and Its Effect on the Corrosion Resistance and Cytocompatibility

Advanced Engineering Materials, EarlyView.
Viktoriia Shtefan, Thorgund Nemec, Ute Hempel, Annett Gebert and coworkers demonstrate that anodic treatment of Ti–Cu‐based metallic glass in a nontoxic pyrophosphate electrolyte forms a protective bilayered Ti/Zr‐oxide film enriched with Cu nanocrystals.
Viktoriia Shtefan, Nora Fernández Navas, Thorgund Nemec, Ivan Kaban, Ute Hempel, Andrea Voss, Volker Hoffmann, Darius Pohl, Annett Gebert   +8 more
wiley   +1 more source

The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS

IEEE Journal of the Electron Devices Society, 2018
Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion.
Harald Homulle, Lin Song, Edoardo Charbon, Fabio Sebastiano   +3 more
doaj   +1 more source