Results 141 to 150 of about 7,600,943 (308)
Design and Implementation of a Hybrid SET-CMOS Based Sequential Circuits [PDF]
Журнал нано- та електронної фізики, 2012 Single Electron Transistor is a hot cake in the present research area of VLSI design and Microelectron-ics technology. It operates through one-by-one tunneling of electrons through the channel, utilizing the Coulomb blockade Phenomenon.
Anindya Jana +3 more
doaj
Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology. [PDF]
Sensors (Basel), 2021 Wu CH, Shih PJ, Tsai YC, Dai CL.
europepmc +1 more source
Advanced Materials, EarlyView.Associating a red‐NIR phosphorescent octahedral hexanuclear molybdenum cluster compound with hexaethyleneoxide chains bearing mesogenic units on both ends leads to an emissive hybrid liquid crystal showing mesomorphism on a very unusual temperature range down to −25°C.
Killiann Heinz +11 more
wiley +1 more source
Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors [PDF]
Dark current increase distributions due to displacement damages are modeled using displacement damage dose concept. Several CMOS image sensors have been exposed to neutrons or protons and we have characterized their degradation in terms of dark current ...
Goiffon, Vincent +7 more
core
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Advanced Materials, EarlyView.Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology. [PDF]
Nanoscale Res Lett, 2021 Wang CP +6 more
europepmc +1 more source
Advanced Materials, EarlyView.Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim +8 more
wiley +1 more source
Direct Observation of Propagating Spin Waves in a Spin Hall Nano‐Oscillator
Advanced Materials, EarlyView.By combining frequency injection locking with time‐resolved scanning transmission x‐ray microscopy (TR‐STXM), the authors image the real‐time magnetization dynamics of a spin Hall nano‐oscillator (SHNO) for the first time. Their results reveal richer dynamics than previously reported and challenge existing assumptions regarding the radiation hardness ...
Victor H. González +12 more
wiley +1 more source
A Four-Channel Low-Noise Readout IC for Air Flow Measurement Using Hot Wire Anemometer in 0.18 μm CMOS Technology. [PDF]
Sensors (Basel), 2021 Nam K +8 more
europepmc +1 more source
A Universal van der Waals Tunneling Injector for Monolayer CMOS
Advanced Materials, EarlyView.A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source