Results 121 to 130 of about 8,692,712 (154)
Some of the next articles are maybe not open access.
1998
In this chapter, SOI CMOS technology is described. Starting from the evolution of SOI technology, various SOI substrate and isolation techniques are introduced. Then, a 0.25μm SOI CMOS fabrication processing sequence is described, followed by major SOI CMOS device structures.
James B. Kuo, Ker-Wei Su
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In this chapter, SOI CMOS technology is described. Starting from the evolution of SOI technology, various SOI substrate and isolation techniques are introduced. Then, a 0.25μm SOI CMOS fabrication processing sequence is described, followed by major SOI CMOS device structures.
James B. Kuo, Ker-Wei Su
openaire +1 more source
2004
In the 1940s the electronic history was marked by the invention of the transistor and only a decade after the first Integrated Circuit (IC) was realized. Nowadays, few decades after that invention, the CMOS Technology Platform is putting us in front of another major forefront: the capability to realize an entire system on a single piece of silicon, the
openaire +1 more source
In the 1940s the electronic history was marked by the invention of the transistor and only a decade after the first Integrated Circuit (IC) was realized. Nowadays, few decades after that invention, the CMOS Technology Platform is putting us in front of another major forefront: the capability to realize an entire system on a single piece of silicon, the
openaire +1 more source
Beyond CMOS - benchmarking for future technologies
2012 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2012Sotomayor Torres, C.M. +5 more
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2010
Performance capability of circuits depends to a great extent on the available semiconductor technology. Numerous parameters related to device, metallization or substrate properties circumscribe the achievable circuit characteristics at microwave frequencies and thus can be used for technology comparison.
openaire +1 more source
Performance capability of circuits depends to a great extent on the available semiconductor technology. Numerous parameters related to device, metallization or substrate properties circumscribe the achievable circuit characteristics at microwave frequencies and thus can be used for technology comparison.
openaire +1 more source
Upset Hardened Memory Design for Submicron CMOS Technology
IEEE Transactions on Nuclear Science, 1996Michael Nicolaidis, R Velazco
exaly
CMOS Active Pixel Image Sensors Fabricated Using a 1.8-V, 0.25-μm CMOS Technology
IEEE Transactions on Electron Devices, 1998E Crabbe
exaly