High Gain, Low Noise and Power Transimpedance Amplifier Based on Second Generation Voltage Conveyor in 65 nm CMOS Technology. [PDF]
García-Montesdeoca JC +2 more
europepmc +1 more source
Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei +10 more
wiley +1 more source
Design and Implementation of a Hybrid SET-CMOS Based Sequential Circuits [PDF]
Single Electron Transistor is a hot cake in the present research area of VLSI design and Microelectron-ics technology. It operates through one-by-one tunneling of electrons through the channel, utilizing the Coulomb blockade Phenomenon.
Anindya Jana +3 more
doaj
Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes. [PDF]
Zhang D +12 more
europepmc +1 more source
Maskless Fabrication of PLA‐Based Neural Arrays for CNS Recording and Stimulation
Biodegradable neural interfaces enable bidirectional communication with the CNS. Through electrochemical characterization, ageing tests with impedance monitoring, and in vivo validation, we assess the performance of PLA‐based epicortical and spinal implants.
Anna De Salvo +14 more
wiley +1 more source
Design of a Capacitance-to-Digital Converter Based on Iterative Delay-Chain Discharge in 180 nm CMOS Technology. [PDF]
Cicalini M, Piotto M, Bruschi P, Dei M.
europepmc +1 more source
Advances in Halide Perovskites for Photon Radiation Detectors
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang +3 more
wiley +1 more source
Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology. [PDF]
Wu CH, Shih PJ, Tsai YC, Dai CL.
europepmc +1 more source
Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs
S. Bonen +19 more
semanticscholar +1 more source
Hf–Zr–O‐based morphotropic phase boundary (MPB) thin films often suffer from limited endurance and poor uniformity due to intrinsic phase instability. This work proposes a nanolaminate architecture that spatially separates competing phases, stabilizes phase formation, and suppresses wake‐up‐induced degradation.
Hojung Jang, Hyunsang Hwang
wiley +1 more source

