Results 211 to 220 of about 7,631,832 (303)

Overcoming the Trade‐off in Oscillatory TRNGs With a Hybrid NbO2 and Atomic Fluctuation Entropy Source Architecture

open access: yesAdvanced Electronic Materials, EarlyView.
A hybrid oscillator combining an atomic swith and an insulator‐to metal transition device converts stochastic filament resistance into random oscillation periods. The interaction between highly variable atomic switching and stable high‐frequency oscillation amplifies entropy, enabling fast energy‐efficient, and reliable true random number generation ...
Sunhyeong Lee   +4 more
wiley   +1 more source

A K-Band Four-Channel Beamformer with Temperature Compensation Based on 65 nm CMOS Process. [PDF]

open access: yesMicromachines (Basel)
Wang C   +8 more
europepmc   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

open access: yesAdvanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter   +7 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Design of electronically tunable fractional-order elements based on distributed MOS transistor structures. [PDF]

open access: yesSci Rep
Kubanek D   +9 more
europepmc   +1 more source

Stage-Wise Curing for Improving the Bonding Strength of Imaging Coupling Devices. [PDF]

open access: yesMaterials (Basel)
Xing Y   +7 more
europepmc   +1 more source

System-level integration of halide perovskite optoelectronics for its commercial deployment. [PDF]

open access: yesNat Commun
Yang W   +9 more
europepmc   +1 more source

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