Results 131 to 140 of about 51,644 (295)
The first TrFE‐free ferroelectric polymers exhibiting concurrently a morphotropic phase boundary and high Curie temperature are reported through a grafting strategy, which is completely different from previous methods to design MPB by composition and irradiation. This finding offers a cost‐effective solution to decode the long‐standing inverse relation
Zekai Fei +6 more
wiley +1 more source
Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee +9 more
wiley +1 more source
Memristive Physical Reservoir Computing
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
wiley +1 more source
Herein, we demonstrate a breakthrough in dielectric energy storage by engineering local polarization units in high‐entropy multilayer ceramic capacitors (MLCCs). The optimized MLCCs achieve an ultrahigh recoverable energy density of 18.2 J cm−3 with 91% efficiency, coupled with exceptional thermal stability and fatigue resistance.
Shiyu Zhou +11 more
wiley +1 more source
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
Outstanding TC Enhancement in 5d–3d Y2NiIrO6 by Compression
Double perovskite Y2NiIrO6 with half filed 3d eg–5d t2g configuration, exhibits first experimental example of pressure‐enhanced magnetic interaction in iridate and iridate‐related systems. Its Curie temperature increase from 192 to 243 K at 17 GPa. Herein, the orthogonal eg–t2g pathway remains robust even under compression‐induced lattice distortion ...
Zheng Deng +18 more
wiley +1 more source
This work reports a thermally safe, photothermally reprogrammable magnetic soft robot with its reprogramming temperature tuned to ∼39.5°C for biocompatibility. It achieves multimodal locomotion (max speed of 1.8 BL/s) and integrates liquid‐metal capacitive sensing to monitor self‐motion and detect environmental changes in simulated gastric environments,
Liu Yang +5 more
wiley +1 more source
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner +15 more
wiley +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source

