Results 141 to 150 of about 51,644 (295)

Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf0.5Zr0.5O2 Capacitors and Characterization

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Doped HfO2 ferroelectrics have attracted significant attention owing to their compatibility with CMOS processes in memory applications. The evolution of phases in doped HfO2 films during the wake‐up process remains a subject of ongoing interest.
Zichong Zhang   +8 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

High‐Performance X‐Band Electromagnetic Interference Shielding in Flexible Barium Hexaferrite/Cobalt‐Based Microwires/Silicone Rubber Ternary Composites via Magnetic–Conductive Synergy

open access: yesAdvanced Electronic Materials, EarlyView.
A flexible ternary composite combining barium hexaferrite (BHF), Co–Microwires, and silicone rubber exploits magnetic–conductive synergy to deliver tunable X‐band EMI shielding, reaching a 16.9 dB at 9.8 GHz (surpassing the 10 dB industrial benchmark). Shielding behavior shifts between reflection and absorption with BHF loading and Co–Microwires counts
Moustafa A. Darwish   +4 more
wiley   +1 more source

Tailoring the Anomalous Nernst Effect of Co/Pt Multilayers Grown on Strained Flexible Substrates

open access: yesAdvanced Electronic Materials, EarlyView.
Strain engineering offers a powerful approach to enhance the Anomalous Nernst Effect in flexible Co/Pt multilayers. This study demonstrates a 30% thermoelectric improvement under mechanical strain, directly attributed to the modulation of intrinsic interfacial interactions.
Pablo Martinez Outomuro   +4 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Origin of the high coercivity in FeNi inspired magnets. [PDF]

open access: yesSci Rep
Hernando A   +9 more
europepmc   +1 more source

Harnessing Digital Microstructure for Simulation‐Guided Optimization of Permanent Magnets

open access: yesAdvanced Intelligent Discovery, EarlyView.
An experimental‐to‐computational workflow is presented that transforms experimental 3D focused ion beam‐scanning electron microscopy data into a simulation‐ready digital microstructure for multiphase functional materials. Using heavy‐rare‐earth‐free Nd–Fe–B magnets as a model system, the approach quantifies grain connectivity across complex secondary ...
Nikita Kulesh   +4 more
wiley   +1 more source

Home - About - Disclaimer - Privacy