Results 211 to 220 of about 12,033 (260)
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Coherence Among Climate Signals, Precipitation, and Groundwater
Groundwater, 2010Climate signals may affect groundwater level at different time scales in different geographical regions, and those patterns or time scales can be estimated using coherence analysis. This study shows that the synthesis effort required to search for patterns at the physical geography scale is possible, and this approach should be ...
Reza Namdar, Ghanbari, Hector R, Bravo
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Formation of coherent precipitates of platinum in sapphire
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999Abstract The surface region of sapphire was modified by implantation of Pt ions. Single crystalline α-Al 2 O 3 samples were implanted at room temperature with 160 keV Pt ions to fluences from 1 × 10 14 to 5 × 10 16 Pt + /cm 2 . For doses up to 10 15 Pt + /cm 2 , 80% of the implanted ions occupy substitutional sites in the Al sublattice.
E Alves +4 more
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The loss of coherency of precipitates and the generation of dislocations
The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics, 1970Abstract The theory of Brown, Woolhouse and Valdre (1968) is extended to include the possibility of the nucleation of interface dislocations by prismatic punching and the condensation of point defects. It is shown that neither process can occur spontaneously (i.e.
L. M. Brown, G. R. Woolhouse
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Presence of coherent precipitate in VC0.76 monocrystals
Journal of the Less Common Metals, 1973Abstract An electron transmission microscope study in VC0.76 monocrystals has revealed the presence of a fine, coherent, ordered precipitate randomly distributed in a disordered matrix. The precipitate revealed a domain structure similar to that observed within the domains in VC0.84 monocrystals.
P.H. Thornton, R.K. Govila
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Critical sizes for the stabilization of coherent precipitates
Journal of Applied Physics, 2014On growth of a precipitate beyond a critical size (r*), interfacial misfit dislocation loops are energetically stabilized. In the case of precipitation in (small) finite crystals, the energy of both the coherent precipitate and the dislocation loop are altered with respect to bulk crystals.
Arun Kumar +2 more
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HREM of coherent precipitates in ZrO2 alloys
Ultramicroscopy, 1987Abstract Coherent precipitates in ZrO 2 alloys, particularly those containing MgO or Y 2 O 3 , are the dominant microstructural feature in strong and tough transformation-toughened ZrO 2 -based ceramics. HREM has been used to study such precipitates in Mg-PSZ and Y-PSZ (MgO and Y 2 O 3 partially stabilized ZrO 2 ).
A.H. Heuer, V. Lanteri, R. Chaim
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An approximation to the description of growth of coherent precipitates
Kristall und Technik, 1981AbstractThe tree‐dimensional growth of a spherical coherent particle in an isotropic infinite matrix is considered in the frame of the stationary solution of the classical diffusion equation applying WAGNERS approximation in a varied manner and taking into account both the concentration dependence of the diffusion constant D and the influence of ...
O. Simmich, H. Löffler
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On the coherency-loss problem of growing precipitates
Philosophical Magazine, 1971Abstract A computer simulation technique is used to study the coherency strains around a growing precipitate at an atomic level. It is found that the presence of vacancies at the interface may reduce the long-range stresses in the matrix due to local microslip in the region of the vacancy.
K. E. Easterling, T. Johannesson
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A model for coherency strengthening of large precipitates
Scripta Materialia, 2014In precipitation strengthening, the lattice misfit between precipitate and matrix produces a strain field around precipitates, which impedes dislocation movement. In this paper, a strengthening model is presented, which delivers the stress increment associated with the strain field around large homogeneous spherical precipitates.
M.R. Ahmadi +5 more
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Coherent precipitation of silicon nitride in silicon
Applied Physics Letters, 1988Coherent growth of α-Si3N4 precipitates is observed in a silicon matrix after implantation of 150 keV N+ at a dose of 1×1018/cm2 into (110) silicon. The near-channeling conditions lead to a band of discrete precipitates, 0.5 μm below the continuous, polycrystalline buried nitride layer.
V. S. Kaushik +4 more
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