Results 241 to 250 of about 279,849 (339)

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
HfOx‐based resistive random‐access‐memory (TiN/Ti/HfOx/RuOx/TiN) is fabricated by CMOS‐compatible materials – ruthenium, with a maskless etching‐free process. After a 5‐Mrad total ionizing dose test, the results showed non‐degradation performance, memory window ≈ 40 with operation power < 2 mW, > 8k endurance cycles, and 15‐year retention, which can be
Yao‐Feng Chang   +3 more
wiley   +1 more source

Analysis of boot rail collision resistance in rocket sled test system

open access: gold, 2019
Jun Xiao   +4 more
openalex   +1 more source

Neural‐Network Potential for Defect Formation Induced by Knock‐On Irradiation Damage in 4H‐SiC

open access: yesAdvanced Electronic Materials, EarlyView.
This study constructed an efficient neural network potential (NNP) for simulating the irradiation damage in 4H‐SiC with accuracy at first‐principles level. Using this NNP, the directional dependence of the threshold displacement energies (TDE) is determined based on high‐throughput calculations, and the calculated minimal TDE agrees with experiments ...
Wei Liu   +4 more
wiley   +1 more source

Highly Transparent, Conductive, and Mechanically Robust Hydrogels via Rapid In Situ Synthesis for Flexible Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy for rapid in situ synthesis of hydrogels using Mo₂C‐derived molybdenum polyoxometalates (Mo‐POM) and ammonium persulfate enables room‐temperature polymerization. The hydrogels exhibit high transparency, conductivity, mechanical robustness, and durability. Integration of LiCl ensures antifreeze and water retention, while Mo‐POM/alginate
W. Yuan, J. Zhao
wiley   +1 more source

TFT Backplanes Doped by BF2 Ion for Improved Stability and AMOLED Display Quality

open access: yesAdvanced Electronic Materials, EarlyView.
BF₂ ion in LTPS TFT induces an additional shallow defect level near the valence band edge, which is confirmed by deep‐level transient spectroscopy test. BF₂ in the poly Si functions as a donor, facilitating mutual compensation of defect charges within the TFT channel, and consequently, BF₂‐doped TFT channels exhibit a lower density of deep‐level traps,
Ying Shen   +8 more
wiley   +1 more source

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