Results 231 to 240 of about 4,230 (297)

A modular framework for automated segmentation and analysis of AFM imaging of chromatin organization. [PDF]

Nucleic Acids Res
Sørensen EW, Pangeni S, Merino Urteaga R, Murray PJ, Rudnizky S, Liao TW, Rashid F, Hwang J, Yamadi M, Feng XA, Zähringer J, Gu S, Davidson IF, Caccianini L, Osorio-Valeriano M, Farnung L, Vos SM, Peters JM, Berger J, Wu C, Hatzakis NS, Kirkegaard JB, Ha T.   +22 more
europepmc   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials, EarlyView.
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
wiley   +1 more source

Compact stars with non-uniform relativistic polytrope. [PDF]

Sci Rep
Nouh MI, Foda MM, Aboueisha MS.
europepmc   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

LIGO Core-Collapse Supernova Detection Using Convolutional Neural Networks. [PDF]

Sensors (Basel)
Pan Z, Zahraoui EM, Maturana-Russel P, Cabrera-Guerrero G.   +3 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Revealing Cycling-Induced Evolution of Intact Sodium Metal Battery Interfaces Using Cryo-Focused Ion Beam Cross-Sectioning and Electron Microscopy. [PDF]

Small
Matthews KC, Vaidyula RR, Mullins CB, Warner JH.   +3 more
europepmc   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

Advanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj, Ashfak Nehal, Dmitrii Semenov, Roman Sotner, Sayani Majumdar   +4 more
wiley   +1 more source

A binary system in the S cluster close to the supermassive black hole Sagittarius A. [PDF]

Nat Commun
Peißker F, Zajaček M, Labadie L, Bordier E, Eckart A, Melamed M, Karas V.   +6 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source