Results 91 to 100 of about 25,106,713 (303)

Bipolar Resistive RAM Based on ${\rm HfO}_{2}$: Physics, Compact Modeling, and Variability Control

open access: yesIEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016
In this paper, we thoroughly investigate the characteristics of the TiN/Ti/HfO2/TiN resistive random access memory (RRAM) device. The physical mechanisms involved in the device operations are comprehensively explored from the atomistic standpoint.
F. Puglisi   +3 more
semanticscholar   +1 more source

Additive Manufacturing of Continuous Fibre Reinforced Composites: Process, Characterisation, Modelling, and Sustainability

open access: yesAdvanced Engineering Materials, EarlyView.
Additive manufacturing provides precise control over the placement of continuous fibres within polymer matrices, enabling customised mechanical performance in composite components. This article explores processing strategies, mechanical testing, and modelling approaches for additive manufactured continuous fibre‐reinforced composites.
Cherian Thomas, Amir Hosein Sakhaei
wiley   +1 more source

Phase Field Failure Modeling: Brittle‐Ductile Dual‐Phase Microstructures under Compressive Loading

open access: yesAdvanced Engineering Materials, EarlyView.
The approach by Amor and the approach by Miehe and Zhang for asymmetric damage behavior in the phase field method for fracture are compared regarding their fitness for microcrack‐based failure modeling. The comparison is performed for the case of a dual‐phase microstructure with a brittle and a ductile constituent.
Jakob Huber, Jan Torgersen, Ewald Werner
wiley   +1 more source

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]

open access: yesMicromachines (Basel), 2021
Wang J   +5 more
europepmc   +1 more source

Modelling compact pulsators

open access: yesJournal of Physics: Conference Series, 2008
We currently know of five distinct classes of compact pulsators, loosely defined as oscillating stars with a surface gravity above log g = 5. Three of these fall into the white dwarf regime (GW Vir, V777 Her and ZZ Ceti stars), while the other two are identified with hot B subdwarfs (EC 14026 and PG 1716 stars).
Randall, Suzanna   +3 more
openaire   +1 more source

Multimodal Data‐Driven Microstructure Characterization

open access: yesAdvanced Engineering Materials, EarlyView.
A self‐consistent autonomous workflow for EBSP‐based microstructure segmentation by integrating PCA, GMM clustering, and cNMF with information‐theoretic parameter selection, requiring no user input. An optimal ROI size related to characteristic grain size is identified.
Qi Zhang   +4 more
wiley   +1 more source

Fatigue Crack Initiation and Growth in Nanocrystalline Ni at Multiple Length‐Scales

open access: yesAdvanced Engineering Materials, EarlyView.
Overview of miniaturized in situ SEM fatigue setup and resultant fatigue crack growth data for nanocrystalline Ni. The presented study focuses on the analysis of fatigue crack growth rate (FCGR) in focused ion beam‐notched microcantilevers prepared from nanocrystalline (NC) Ni as a model material.
Igor Moravcik   +7 more
wiley   +1 more source

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

open access: yesElectronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

A Lightweight Procedural Layer for Hybrid Experimental–Computational Workflows in Materials Science

open access: yesAdvanced Engineering Materials, EarlyView.
We unveil a prototype hybrid‐workflow framework that fuses automatedcomputation with hands‐on experiments. Built atop pyiron, a lightweight, parameterized layer translates procedure descriptions into executable manual steps, syncing instrument settings, human interventions, and data capture in real‐time today.
Steffen Brinckmann   +8 more
wiley   +1 more source

Compact Modeling of Flicker Noise in HEMTs

open access: yesIEEE Journal of the Electron Devices Society, 2014
In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel.
Avirup Dasgupta   +2 more
doaj   +1 more source

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