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IEEE AccessApplication of machine learning (ML) approaches has recently expanded within a wide range of domains, including semiconductor devices. Their strong potential resulted in increasing number of research in semiconductor device modeling and simulation.
Kazi Mohammad Mamun +2 more
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IEEE Journal of the Electron Devices Society, 2021 Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo +7 more
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Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays
IEEE Journal of the Electron Devices Society, 2023 In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena +4 more
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Transistor Laser Antenna: Electromagnetic Model in Transmit and Receive Modes
IEEE Access, 2022 Transistor laser can drive recent innovative technologies like optical antennas and rectennas. To this end, this semiconductor device requires an accurate electromagnetic model capable of determining the antenna characteristics like radiation pattern ...
Arman Afsari +3 more
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Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing
IEEE Access, 2020 An optimal design of semiconductor device and its process uniformity are critical factors affecting desired figure-of-merits as well as reducing fabrication cost of fixing possible malfunctioning in semiconductor manufacturing.
Hyun-Chul Choi +3 more
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Foreword Special Issue on Compact Modeling of Semiconductor Devices
IEEE Journal of the Electron Devices Society, 2020 This Special Issue is dedicated to recent research in the field of compact modeling of semiconductor devices. This is the first J-EDS Special Issue on compact modeling.
Benjamin Iniguez +7 more
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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
IEEE Journal of the Electron Devices Society, 2021 We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of ...
Benjamin Iniguez +14 more
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IEEE Photonics Journal, 2022 In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of ...
Xiaolei Zhao +3 more
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Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models [PDF]
, 1997 The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models.
Bonani, S. +15 more
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A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]
, 1998 The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
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