Results 41 to 50 of about 3,944,515 (307)

Foreword

IEEE Journal of the Electron Devices Society, 2020
This Special Issue is dedicated to recent research in the field of compact modelling for circuit design. The topics included all device structures, provided it was demonstrated thet the presented compact modelling solutions were implementable in circuit ...
Benjamin Iniguez, Lluis F. Marsal, Arturo Escobosa, Fernando Guarin   +3 more
doaj   +1 more source

Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

Advanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang, Jianxiang Zhao, Zhaoqi Chen, Hao Gong, Yinsen Yan, Junlei Tao, Yong Yang   +6 more
wiley   +1 more source

Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]

, 2011
Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent, Philippe Paillet, Gaillardin, Marc, Sylvain Girard, Girard, Sylvain, Pierre Magnan, Marc Gaillardin, Martinez, Martial, Gaillardin, M., Paillet, P., Martial Martinez, Paillet, Philippe, Vincent Goiffon, Magnan, Pierre, Martinez, M.   +14 more
core   +1 more source

Gallium Microalloying in Bi–Sn Solders: Interfacial Phase Formation, Wettability, and Long‐Term Shear Reliability Under Isothermal Aging

Advanced Engineering Materials, EarlyView.
Gallium microalloying redirects interfacial reactions in low‐temperature Bi–Sn solders from Cu–Sn toward Cu–Ga intermetallic formation. The resulting Cu–Ga layer suppresses intermetallic growth during thermal aging, alters fracture pathways, and improves interfacial stability.
Iva Králová, Markéta Klimtová, Mohd Faizul Mohd Sabri, Yew Hoong Wong, Petr Veselý, Martin Plaček, Karel Dušek   +6 more
wiley   +1 more source

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Scientific Reports, 2022
Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various ...
Donguk Kim, Je-Hyuk Kim, Woo Sik Choi, Tae Jun Yang, Jun Tae Jang, Attilio Belmonte, Nouredine Rassoul, Subhali Subhechha, Romain Delhougne, Gouri Sankar Kar, Wonsok Lee, Min Hee Cho, Daewon Ha, Dae Hwan Kim   +13 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

East European Journal of Physics
In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries.
Jo`shqin Sh. Abdullayev, Ibrokhim B. Sapaev   +1 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Large-Scale Training in Neural Compact Models for Accurate and Adaptable MOSFET Simulation

IEEE Journal of the Electron Devices Society
We address the challenges associated with traditional analytical models, such as BSIM, in semiconductor device modeling. These models often face limitations in accurately representing the complex behaviors of miniaturized devices.
Chanwoo Park, Seungjun Lee, Junghwan Park, Kyungjin Rim, Jihun Park, Seonggook Cho, Jongwook Jeon, Hyunbo Cho   +7 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source